Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm

Seth R. Bank; Mark A. Wistey; Homan B. Yuen; Lynford L. Goddard; Hopil Bae; James S. Harris

doi:10.1116/1.1914825

Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm

Seth R. Bank, Mark A. Wistey, Homan B. Yuen, Lynford L. Goddard, Hopil Bae, James S. Harris

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Abstract

The solid-source molecular-beam epitaxial growth of low-threshold GaAs-based GaInNAsSb lasers is discussed. A general narrowing of the growth window was observed with increasing wavelength, due to the increased nitrogen required (≥1%), and has historically made high-performance devices more difficult to achieve beyond ∼1.35 μm. The introduction of antimony and reduction in plasma-related damage from the rf nitrogen source dramatically improved material quality and widened the growth window. We validate these observations with 1.5 μm edge-emitting ridge-waveguide lasers with cw threshold current densities as low as 440 A cm2, peak CW output powers of 431 mW, peak cw wallplug efficiencies >16%, and pulsed output powers >1 W.

Original language	English (US)
Pages (from-to)	1337-1340
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1914825
State	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1914825

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@article{dab3332caced45549f1f31f981528708,

title = "Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm",

abstract = "The solid-source molecular-beam epitaxial growth of low-threshold GaAs-based GaInNAsSb lasers is discussed. A general narrowing of the growth window was observed with increasing wavelength, due to the increased nitrogen required (≥1%), and has historically made high-performance devices more difficult to achieve beyond ∼1.35 μm. The introduction of antimony and reduction in plasma-related damage from the rf nitrogen source dramatically improved material quality and widened the growth window. We validate these observations with 1.5 μm edge-emitting ridge-waveguide lasers with cw threshold current densities as low as 440 A cm2, peak CW output powers of 431 mW, peak cw wallplug efficiencies >16%, and pulsed output powers >1 W.",

author = "Bank, {Seth R.} and Wistey, {Mark A.} and Yuen, {Homan B.} and Goddard, {Lynford L.} and Hopil Bae and Harris, {James S.}",

note = "Funding Information: The authors acknowledge A. Moto of Sumitomo Electric Industries Ltd. for useful discussions, S. Zou of Santur for assistance with wafer thinning, Charles Evans and Associates for SIMS measurements, and Luxtron for the use of the pyrometer. This work was supported under DARPA contracts DAAD17-02-C-0101 and MDA972-00-1-0024, MARCO Interconnect Focus Center Contract MDA972-99-1-0002 and the Stanford Network Research Center (SNRC).",

year = "2005",

doi = "10.1116/1.1914825",

language = "English (US)",

volume = "23",

pages = "1337--1340",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm

AU - Bank, Seth R.

AU - Wistey, Mark A.

AU - Yuen, Homan B.

AU - Goddard, Lynford L.

AU - Bae, Hopil

AU - Harris, James S.

N1 - Funding Information: The authors acknowledge A. Moto of Sumitomo Electric Industries Ltd. for useful discussions, S. Zou of Santur for assistance with wafer thinning, Charles Evans and Associates for SIMS measurements, and Luxtron for the use of the pyrometer. This work was supported under DARPA contracts DAAD17-02-C-0101 and MDA972-00-1-0024, MARCO Interconnect Focus Center Contract MDA972-99-1-0002 and the Stanford Network Research Center (SNRC).

PY - 2005

Y1 - 2005

N2 - The solid-source molecular-beam epitaxial growth of low-threshold GaAs-based GaInNAsSb lasers is discussed. A general narrowing of the growth window was observed with increasing wavelength, due to the increased nitrogen required (≥1%), and has historically made high-performance devices more difficult to achieve beyond ∼1.35 μm. The introduction of antimony and reduction in plasma-related damage from the rf nitrogen source dramatically improved material quality and widened the growth window. We validate these observations with 1.5 μm edge-emitting ridge-waveguide lasers with cw threshold current densities as low as 440 A cm2, peak CW output powers of 431 mW, peak cw wallplug efficiencies >16%, and pulsed output powers >1 W.

AB - The solid-source molecular-beam epitaxial growth of low-threshold GaAs-based GaInNAsSb lasers is discussed. A general narrowing of the growth window was observed with increasing wavelength, due to the increased nitrogen required (≥1%), and has historically made high-performance devices more difficult to achieve beyond ∼1.35 μm. The introduction of antimony and reduction in plasma-related damage from the rf nitrogen source dramatically improved material quality and widened the growth window. We validate these observations with 1.5 μm edge-emitting ridge-waveguide lasers with cw threshold current densities as low as 440 A cm2, peak CW output powers of 431 mW, peak cw wallplug efficiencies >16%, and pulsed output powers >1 W.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

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Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm

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