Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm

Seth R. Bank, Mark A. Wistey, Homan B. Yuen, Lynford L. Goddard, Hopil Bae, James S. Harris

Research output: Contribution to journalArticle

Abstract

The solid-source molecular-beam epitaxial growth of low-threshold GaAs-based GaInNAsSb lasers is discussed. A general narrowing of the growth window was observed with increasing wavelength, due to the increased nitrogen required (≥1%), and has historically made high-performance devices more difficult to achieve beyond ∼1.35 μm. The introduction of antimony and reduction in plasma-related damage from the rf nitrogen source dramatically improved material quality and widened the growth window. We validate these observations with 1.5 μm edge-emitting ridge-waveguide lasers with cw threshold current densities as low as 440 A cm2, peak CW output powers of 431 mW, peak cw wallplug efficiencies >16%, and pulsed output powers >1 W.

Original languageEnglish (US)
Pages (from-to)1337-1340
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number3
DOIs
StatePublished - Dec 1 2005
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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