The solid-source molecular-beam epitaxial growth of low-threshold GaAs-based GaInNAsSb lasers is discussed. A general narrowing of the growth window was observed with increasing wavelength, due to the increased nitrogen required (≥1%), and has historically made high-performance devices more difficult to achieve beyond ∼1.35 μm. The introduction of antimony and reduction in plasma-related damage from the rf nitrogen source dramatically improved material quality and widened the growth window. We validate these observations with 1.5 μm edge-emitting ridge-waveguide lasers with cw threshold current densities as low as 440 A cm2, peak CW output powers of 431 mW, peak cw wallplug efficiencies >16%, and pulsed output powers >1 W.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Dec 1 2005|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering