Molecular beam epitaxy growth of algaas/gaas vertical cavity surface emitting lasers and the performance of pin photodetector/vertical cavity surface emitting laser integrated structures

Y. H. Wang; G. Hasnain; K. Tai; J. D. Wynn; B. E. Weir; K. D. Choquette; A. Y. Cho

doi:10.1143/JJAP.30.3883

Molecular beam epitaxy growth of algaas/gaas vertical cavity surface emitting lasers and the performance of pin photodetector/vertical cavity surface emitting laser integrated structures

Y. H. Wang, G. Hasnain, K. Tai, J. D. Wynn, B. E. Weir, K. D. Choquette, A. Y. Cho

Research output: Contribution to journal › Article › peer-review

Abstract

An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0 2Ga0, 8As (100/80 A) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two A1 cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.

Original language	English (US)
Pages (from-to)	3883-3886
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	30
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.30.3883
State	Published - Dec 1991
Externally published	Yes

Keywords

Crystal growth
Semiconductor lasers

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Online availability

10.1143/JJAP.30.3883

Library availability

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Cite this

Wang, Y. H., Hasnain, G., Tai, K., Wynn, J. D., Weir, B. E., Choquette, K. D., & Cho, A. Y. (1991). Molecular beam epitaxy growth of algaas/gaas vertical cavity surface emitting lasers and the performance of pin photodetector/vertical cavity surface emitting laser integrated structures. Japanese Journal of Applied Physics, 30(12), 3883-3886. https://doi.org/10.1143/JJAP.30.3883

Molecular beam epitaxy growth of algaas/gaas vertical cavity surface emitting lasers and the performance of pin photodetector/vertical cavity surface emitting laser integrated structures. / Wang, Y. H.; Hasnain, G.; Tai, K. et al.
In: Japanese Journal of Applied Physics, Vol. 30, No. 12, 12.1991, p. 3883-3886.

Research output: Contribution to journal › Article › peer-review

Wang, YH, Hasnain, G, Tai, K, Wynn, JD, Weir, BE, Choquette, KD & Cho, AY 1991, 'Molecular beam epitaxy growth of algaas/gaas vertical cavity surface emitting lasers and the performance of pin photodetector/vertical cavity surface emitting laser integrated structures', Japanese Journal of Applied Physics, vol. 30, no. 12, pp. 3883-3886. https://doi.org/10.1143/JJAP.30.3883

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abstract = "An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0 2Ga0, 8As (100/80 A) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two A1 cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.",

keywords = "Crystal growth, Semiconductor lasers",

author = "Wang, {Y. H.} and G. Hasnain and K. Tai and Wynn, {J. D.} and Weir, {B. E.} and Choquette, {K. D.} and Cho, {A. Y.}",

year = "1991",

month = dec,

doi = "10.1143/JJAP.30.3883",

language = "English (US)",

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AU - Wang, Y. H.

AU - Hasnain, G.

AU - Tai, K.

AU - Wynn, J. D.

AU - Weir, B. E.

AU - Choquette, K. D.

AU - Cho, A. Y.

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N2 - An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0 2Ga0, 8As (100/80 A) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two A1 cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.

AB - An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0 2Ga0, 8As (100/80 A) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two A1 cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.

KW - Crystal growth

KW - Semiconductor lasers

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Molecular beam epitaxy growth of algaas/gaas vertical cavity surface emitting lasers and the performance of pin photodetector/vertical cavity surface emitting laser integrated structures

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