Molecular-beam-epitaxy-deposited nonalloyed Al contacts to n-type and p-type InGaAs

T. C. Shen, Z. F. Fan, G. B. Gao, H. Morkoç, A. Rockett

Research output: Contribution to journalArticlepeer-review

Abstract

Nonalloyed Al contacts were deposited by molecular beam epitaxy on both n- and p-type In0.53Ga0.47As layers prior to air exposure. These were shown to be ohmic, with specific contact resistances in the range of mid μΩ cm2 by the transmission-line model method. The thermal stability of these contacts was tested by annealing at temperatures between 350 and 450 °C for 30 min and at 300 °C for 500 h. Both experiments showed stable specific contact resistances.

Original languageEnglish (US)
Pages (from-to)2254-2256
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number18
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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