Abstract
Nonalloyed Al contacts were deposited by molecular beam epitaxy on both n- and p-type In0.53Ga0.47As layers prior to air exposure. These were shown to be ohmic, with specific contact resistances in the range of mid μΩ cm2 by the transmission-line model method. The thermal stability of these contacts was tested by annealing at temperatures between 350 and 450 °C for 30 min and at 300 °C for 500 h. Both experiments showed stable specific contact resistances.
Original language | English (US) |
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Pages (from-to) | 2254-2256 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 59 |
Issue number | 18 |
DOIs | |
State | Published - 1991 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)