Molecular beam epitaxy. A path to novel high Tc superconductors?

D. G. Schlom, J. N. Eckstein, I. Bozovic, Z. J. Chen, A. F. Marshall, K. E. von Dessonneck, J. S. Harris

Research output: Contribution to journalConference articlepeer-review

Abstract

The molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O films is reported. The advantage of using ozone rather than molecular oxygen for the growth of cuprate superconductors by molecular beam epitaxy (MBE) is discussed. Molecular beams of the constituent metals were shuttered on an atomic layer-by-layer basis to grow Bi2Sr2Can-1CunOx phases for n=1 to 5, and ordered superlattices of these phases. Using these techniques an as-grown superconducting film with Tconset near 100 K and Tc (ρ=0) of 84 K was achieved. The films are smooth on an atomic scale. The results demonstrate the ability of shuttered MBE to grow custom layered combinations of Bi2Sr2Can-1CunOx layers. This shuttered MBE growth technique seems quite capable of synthesizing artificially layered epitaxial structures consisting of layers of oxides that are superconducting, non-superconducting metals, semiconducting, or insulating, with control of layer thickness and abruptness on an atomic scale.

Original languageEnglish (US)
Pages (from-to)234-247
Number of pages14
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1285
DOIs
StatePublished - 1990
Externally publishedYes
EventGrowth of Semiconductor Structures and High-Tc Thin Films on Semiconductors - San Diego, CA, USA
Duration: Mar 20 1990Mar 21 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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