Abstract
The molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O films is reported. The advantage of using ozone rather than molecular oxygen for the growth of cuprate superconductors by molecular beam epitaxy (MBE) is discussed. Molecular beams of the constituent metals were shuttered on an atomic layer-by-layer basis to grow Bi2Sr2Can-1CunOx phases for n=1 to 5, and ordered superlattices of these phases. Using these techniques an as-grown superconducting film with Tconset near 100 K and Tc (ρ=0) of 84 K was achieved. The films are smooth on an atomic scale. The results demonstrate the ability of shuttered MBE to grow custom layered combinations of Bi2Sr2Can-1CunOx layers. This shuttered MBE growth technique seems quite capable of synthesizing artificially layered epitaxial structures consisting of layers of oxides that are superconducting, non-superconducting metals, semiconducting, or insulating, with control of layer thickness and abruptness on an atomic scale.
Original language | English (US) |
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Pages (from-to) | 234-247 |
Number of pages | 14 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1285 |
DOIs | |
State | Published - 1990 |
Externally published | Yes |
Event | Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors - San Diego, CA, USA Duration: Mar 20 1990 → Mar 21 1990 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering