Molecular beam epitaxial regrowth on in situ plasma-etched AlAs/AlGaAs heterostructures

Kent D. Choquette; M. Hong; R. S. Freund; S. N.G. Chu; J. P. Mannaerts; R. C. Wetzel; R. E. Leibenguth

doi:10.1063/1.107202

Molecular beam epitaxial regrowth on in situ plasma-etched AlAs/AlGaAs heterostructures

Kent D. Choquette, M. Hong, R. S. Freund, S. N.G. Chu, J. P. Mannaerts, R. C. Wetzel, R. E. Leibenguth

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Abstract

Epitaxial regrowth by solid-source molecular beam epitaxy (MBE) on dry etched heterostructures possessing exposed AlAs surfaces is accomplished for the first time using a vacuum integrated processing. Samples composed of multilayers of AlAs and AlGaAs are patterned with a SiO₂ mask and are anisotropically etched using a low damage electron cyclotron resonance (ECR) SiCl₄ plasma process. Etched samples are transferred in ultrahigh vacuum between the ECR and MBE chambers to avoid atmospheric exposure before regrowth. Microstructural analysis of the overgrown layers by scanning and transmission electron microscopy indicates that epitaxial regrowth on both the etched field and vertical sidewalls is achieved. The regrown material is found to contain microtwin plates, but few dislocations, indicating the good quality of the overgrowth.

Original language	English (US)
Pages (from-to)	1738-1740
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	14
DOIs	https://doi.org/10.1063/1.107202
State	Published - 1992
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.107202

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title = "Molecular beam epitaxial regrowth on in situ plasma-etched AlAs/AlGaAs heterostructures",

abstract = "Epitaxial regrowth by solid-source molecular beam epitaxy (MBE) on dry etched heterostructures possessing exposed AlAs surfaces is accomplished for the first time using a vacuum integrated processing. Samples composed of multilayers of AlAs and AlGaAs are patterned with a SiO2 mask and are anisotropically etched using a low damage electron cyclotron resonance (ECR) SiCl4 plasma process. Etched samples are transferred in ultrahigh vacuum between the ECR and MBE chambers to avoid atmospheric exposure before regrowth. Microstructural analysis of the overgrown layers by scanning and transmission electron microscopy indicates that epitaxial regrowth on both the etched field and vertical sidewalls is achieved. The regrown material is found to contain microtwin plates, but few dislocations, indicating the good quality of the overgrowth.",

author = "Choquette, {Kent D.} and M. Hong and Freund, {R. S.} and Chu, {S. N.G.} and Mannaerts, {J. P.} and Wetzel, {R. C.} and Leibenguth, {R. E.}",

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doi = "10.1063/1.107202",

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pages = "1738--1740",

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T1 - Molecular beam epitaxial regrowth on in situ plasma-etched AlAs/AlGaAs heterostructures

AU - Choquette, Kent D.

AU - Hong, M.

AU - Freund, R. S.

AU - Chu, S. N.G.

AU - Mannaerts, J. P.

AU - Wetzel, R. C.

AU - Leibenguth, R. E.

PY - 1992

Y1 - 1992

N2 - Epitaxial regrowth by solid-source molecular beam epitaxy (MBE) on dry etched heterostructures possessing exposed AlAs surfaces is accomplished for the first time using a vacuum integrated processing. Samples composed of multilayers of AlAs and AlGaAs are patterned with a SiO2 mask and are anisotropically etched using a low damage electron cyclotron resonance (ECR) SiCl4 plasma process. Etched samples are transferred in ultrahigh vacuum between the ECR and MBE chambers to avoid atmospheric exposure before regrowth. Microstructural analysis of the overgrown layers by scanning and transmission electron microscopy indicates that epitaxial regrowth on both the etched field and vertical sidewalls is achieved. The regrown material is found to contain microtwin plates, but few dislocations, indicating the good quality of the overgrowth.

AB - Epitaxial regrowth by solid-source molecular beam epitaxy (MBE) on dry etched heterostructures possessing exposed AlAs surfaces is accomplished for the first time using a vacuum integrated processing. Samples composed of multilayers of AlAs and AlGaAs are patterned with a SiO2 mask and are anisotropically etched using a low damage electron cyclotron resonance (ECR) SiCl4 plasma process. Etched samples are transferred in ultrahigh vacuum between the ECR and MBE chambers to avoid atmospheric exposure before regrowth. Microstructural analysis of the overgrown layers by scanning and transmission electron microscopy indicates that epitaxial regrowth on both the etched field and vertical sidewalls is achieved. The regrown material is found to contain microtwin plates, but few dislocations, indicating the good quality of the overgrowth.

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Molecular beam epitaxial regrowth on in situ plasma-etched AlAs/AlGaAs heterostructures

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