@article{1660399c45f241c0985c64d79d98b2c8,
title = "Molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O compounds",
abstract = "The in situ epitaxial growth of Bi-Sr-Ca-Cu-O films by molecular beam epitaxy (MBE) is reported. The suitability of various oxidants for the MBE growth of cuprate superconductors is discussed and the use of ozone described. Molecular beams of the constituents were periodically shuttered to grow various Bi2Sr2Can-1CunOx phases, including 2201, 2212, 2223, 2245, and layered 2212/2223 and 2223/2234 mixtures. Some of the films grown in this way were superconducting as grown. The ability of MBE to grow layered, probably metastable Bi2Sr2Can-1CunOx films is demonstrated. This is a major step in the development of growth method capable of producing custom layered combinations of perovskite-related compounds.",
author = "Schlom, \{D. G.\} and Marshall, \{A. F.\} and Sizemore, \{J. T.\} and Chen, \{Z. J.\} and Eckstein, \{J. N.\} and I. Bozovic and \{Von Dessonneck\}, \{K. E.\} and Harris, \{J. S.\} and Bravman, \{J. C.\}",
note = "We gratefully acknowledge the help of J. Helmer in designing the oxygen plasma source; the helpful comments of D. Berkley on the design of an ozone delivery system; the RBS analysis of 5, Baurnann of Charles Evans \& Associates; the microprobe analysis of C. Zercher; Kim Nelson for some of the TEM sample preparation; stimulating interactions with the entire Stanford high-T0 thin film group including P.A. Rosenthal, V. Matijasevic, M.R. Hahn, and T.L. Hylton on ozone use and N.A. Missert and R.H. Hammond on in situ oxygen plasma studies; R.W. Barton and G. Waychunas on the X-ray studies; and the able technical assistance of Y. Desai. This work was supported in part by DARPA/ONR under contract number N00014-88-C-0760, Varian Associates research funds, the National Science Foundation Material Research Laboratory Program through the Center of Materials Research at Stanford University and the Joint Services Electronics program through contract number DAAG29-84-K-0048. DGS acknowledges the support of a Semiconductor Research Corporation fellowship.",
year = "1990",
month = may,
doi = "10.1016/0022-0248(90)90393-Y",
language = "English (US)",
volume = "102",
pages = "361--375",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier B.V.",
number = "3",
}