Molecular-beam epitaxial growth and characterization of (In 0.5Al 0.5) 1-xMn xAs-(In 0.5Ga 0.5) 1-xMn xAs: Thin films and superlattices

O. Maksimov, B. L. Sheu, P. Schiffer, N. Samarth

Research output: Contribution to journalArticle

Abstract

We describe the growth and properties of (In0.5 Al0.5) 1-x Mnx As and (In0.5 Ga0.5) 1-x Mnx As epilayers and superlattices. We find that the structural quality of the epilayers is similar to that of the more extensively studied In1-x Mnx As and Ga1-x Mnx As magnetic semiconductors and that we can incorporate significantly larger amounts of Mn (∼12%) without phase segregation. Magnetization measurements indicate that the Curie temperatures of (In0.5 Ga0.5) 1-x Mnx As and (In0.5 Al0.5) 1-x Mnx As (x∼0.11) epilayers are 95 and 25 K, respectively. The Curie temperature of the (In0.5 Ga0.5) 1-x Mnx As (In0.5 Al0.5) 1-x Mnx As superlattices decreases with the increase of the Al (Al+Ga) ratio. We attribute this to a decreased overlap between the impurity band and the valence band because of an enhanced Mn acceptor activation energy.

Original languageEnglish (US)
Pages (from-to)1304-1307
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number3
DOIs
StatePublished - Dec 1 2005

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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