Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors

B. F. Chu-Kung; C. H. Wu; G. Walter; M. Feng; N. Holonyak; T. Chung; J. H. Ryou; R. D. Dupuis

doi:10.1063/1.2821380

Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors

B. F. Chu-Kung
, C. H. Wu
, G. Walter
, M. Feng
, N. Holonyak
, T. Chung
, J. H. Ryou
, R. D. Dupuis

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical and optical characteristics of high-gain, small-area InGaNGaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor deposition on sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μ m2 emitter device demonstrates a current gain Β=Δ IC Δ IB =49 at 3 mA and breakdown voltage, BVCEO >70 V. The radiative recombination spectrum of a large area 100×100 μ m2 emitter HBT is measured, showing a peak at 387 nm and a full width at half maximum of 47 nm. A 1 kHz modulation input is applied to the HBT and both the optical and electrical outputs of a large area device is demonstrated.

Original language	English (US)
Article number	232114
Journal	Applied Physics Letters
Volume	91
Issue number	23
DOIs	https://doi.org/10.1063/1.2821380
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.2821380

Library availability

Discover UIUC Full Text

Cite this

@article{13a9bdba265c4ad4824867e75d523fd0,

title = "Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors",

abstract = "The electrical and optical characteristics of high-gain, small-area InGaNGaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor deposition on sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μ m2 emitter device demonstrates a current gain Β=Δ IC Δ IB =49 at 3 mA and breakdown voltage, BVCEO >70 V. The radiative recombination spectrum of a large area 100×100 μ m2 emitter HBT is measured, showing a peak at 387 nm and a full width at half maximum of 47 nm. A 1 kHz modulation input is applied to the HBT and both the optical and electrical outputs of a large area device is demonstrated.",

author = "Chu-Kung, \{B. F.\} and Wu, \{C. H.\} and G. Walter and M. Feng and N. Holonyak and T. Chung and Ryou, \{J. H.\} and Dupuis, \{R. D.\}",

note = "The authors are grateful for the support from Dr. Mark Rosker of DARPA-MTO under Wide Bandgap Semiconductors, Yunni Pao Family Fellowship, and Intel Fellowship. N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering. R. D. Dupuis acknowledges the support of the Steve W. Chaddick Chair in Electro-Optics, the EPAR Foundation, and the Georgia Research Alliance.",

year = "2007",

doi = "10.1063/1.2821380",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors

AU - Chu-Kung, B. F.

AU - Wu, C. H.

AU - Walter, G.

AU - Feng, M.

AU - Holonyak, N.

AU - Chung, T.

AU - Ryou, J. H.

AU - Dupuis, R. D.

N1 - The authors are grateful for the support from Dr. Mark Rosker of DARPA-MTO under Wide Bandgap Semiconductors, Yunni Pao Family Fellowship, and Intel Fellowship. N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering. R. D. Dupuis acknowledges the support of the Steve W. Chaddick Chair in Electro-Optics, the EPAR Foundation, and the Georgia Research Alliance.

PY - 2007

Y1 - 2007

N2 - The electrical and optical characteristics of high-gain, small-area InGaNGaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor deposition on sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μ m2 emitter device demonstrates a current gain Β=Δ IC Δ IB =49 at 3 mA and breakdown voltage, BVCEO >70 V. The radiative recombination spectrum of a large area 100×100 μ m2 emitter HBT is measured, showing a peak at 387 nm and a full width at half maximum of 47 nm. A 1 kHz modulation input is applied to the HBT and both the optical and electrical outputs of a large area device is demonstrated.

AB - The electrical and optical characteristics of high-gain, small-area InGaNGaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor deposition on sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μ m2 emitter device demonstrates a current gain Β=Δ IC Δ IB =49 at 3 mA and breakdown voltage, BVCEO >70 V. The radiative recombination spectrum of a large area 100×100 μ m2 emitter HBT is measured, showing a peak at 387 nm and a full width at half maximum of 47 nm. A 1 kHz modulation input is applied to the HBT and both the optical and electrical outputs of a large area device is demonstrated.

UR - https://www.scopus.com/pages/publications/36849079758

UR - https://www.scopus.com/pages/publications/36849079758#tab=citedBy

U2 - 10.1063/1.2821380

DO - 10.1063/1.2821380

M3 - Article

AN - SCOPUS:36849079758

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232114

ER -

Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this