Modulating the secondary electron emission coefficient at the base-collector interface of the plasma bipolar junction transistor

B. Li; T. J. Houlahan; C. J. Wagner; J. G. Eden

doi:10.1063/1.4792692

Modulating the secondary electron emission coefficient at the base-collector interface of the plasma bipolar junction transistor

B. Li, T. J. Houlahan, C. J. Wagner, J. G. Eden

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Temporally and spatially-resolved images of the visible emission generated by the gas phase collector of an n⁺pn plasma bipolar junction transistor (PBJT) demonstrate the ability of the emitter-base (EB) bias to modulate the effective secondary electron emission coefficient, γ S E, at the base-collector interface. Injecting charge carriers into, or withholding free electrons from, the base of a PBJT (with forward or reverse bias of the EB junction) is found to vary γ S E and the collector plasma electron density by factors of 1.8-3.6 and 3.8-6.7, respectively.

Original language	English (US)
Article number	083502
Journal	Applied Physics Letters
Volume	102
Issue number	8
DOIs	https://doi.org/10.1063/1.4792692
State	Published - Feb 25 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4792692

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title = "Modulating the secondary electron emission coefficient at the base-collector interface of the plasma bipolar junction transistor",

abstract = "Temporally and spatially-resolved images of the visible emission generated by the gas phase collector of an n+pn plasma bipolar junction transistor (PBJT) demonstrate the ability of the emitter-base (EB) bias to modulate the effective secondary electron emission coefficient, γ S E, at the base-collector interface. Injecting charge carriers into, or withholding free electrons from, the base of a PBJT (with forward or reverse bias of the EB junction) is found to vary γ S E and the collector plasma electron density by factors of 1.8-3.6 and 3.8-6.7, respectively.",

author = "B. Li and Houlahan, {T. J.} and Wagner, {C. J.} and Eden, {J. G.}",

note = "Funding Information: The support of this work by the U.S. Air Force Office of Scientific Research, the Defense Advanced Research Projects Agency, the National Science Foundation and the Department of Energy under Grant nos. FA9550-10-1-0048, FA8650-12-C-7209, CBET 08-53739, and DE-SC0001540, respectively, is gratefully acknowledged. ",

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AU - Li, B.

AU - Houlahan, T. J.

AU - Wagner, C. J.

AU - Eden, J. G.

N1 - Funding Information: The support of this work by the U.S. Air Force Office of Scientific Research, the Defense Advanced Research Projects Agency, the National Science Foundation and the Department of Energy under Grant nos. FA9550-10-1-0048, FA8650-12-C-7209, CBET 08-53739, and DE-SC0001540, respectively, is gratefully acknowledged.

PY - 2013/2/25

Y1 - 2013/2/25

N2 - Temporally and spatially-resolved images of the visible emission generated by the gas phase collector of an n+pn plasma bipolar junction transistor (PBJT) demonstrate the ability of the emitter-base (EB) bias to modulate the effective secondary electron emission coefficient, γ S E, at the base-collector interface. Injecting charge carriers into, or withholding free electrons from, the base of a PBJT (with forward or reverse bias of the EB junction) is found to vary γ S E and the collector plasma electron density by factors of 1.8-3.6 and 3.8-6.7, respectively.

AB - Temporally and spatially-resolved images of the visible emission generated by the gas phase collector of an n+pn plasma bipolar junction transistor (PBJT) demonstrate the ability of the emitter-base (EB) bias to modulate the effective secondary electron emission coefficient, γ S E, at the base-collector interface. Injecting charge carriers into, or withholding free electrons from, the base of a PBJT (with forward or reverse bias of the EB junction) is found to vary γ S E and the collector plasma electron density by factors of 1.8-3.6 and 3.8-6.7, respectively.

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Modulating the secondary electron emission coefficient at the base-collector interface of the plasma bipolar junction transistor

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