Modification of Transconductance Characteristics For Ion-Implanted GaAs/AlGaAs Heterojunction MESFETs

G. W. Wang; M. Feng; Y. P. Liaw; R. Kaliski; C. L. Lau; C. Ito

doi:10.1049/el:19890483

Modification of Transconductance Characteristics For Ion-Implanted GaAs/AlGaAs Heterojunction MESFETs

G. W. Wang, M. Feng, Y. P. Liaw, R. Kaliski, C. L. Lau, C. Ito

Research output: Contribution to journal › Article › peer-review

Abstract

Inverted GaAs/AIGaAs heterostructures grown by MOCVD have been used to fabricate conventional ion-implanted MESFETs. Two types of GaAs/AIGaAs heterojunctions are studied. One type has a compositionally graded AlGaAs layer which provides a built-in field and corresponding quantum well at the heterointerface. The other type has a constant-composition AlGaAs layer. 0.5 μm gate devices fabricated using the ungraded AlGaAs layer show a maximum extrinsic transconductance G_mof 280 mS/mm and a small G_mvariation over a gate voltage range of 1.5 V. In comparison, devices fabricated using the graded AlGaAs layer exhibit higher transconductance over all the gate voltages and an enhancement of G_mup to 420mS/mm at low gate bias.

Original language	English (US)
Pages (from-to)	713-715
Number of pages	3
Journal	Electronics Letters
Volume	25
Issue number	11
DOIs	https://doi.org/10.1049/el:19890483
State	Published - Sep 1 1989
Externally published	Yes

Keywords

FETs
Ion implantation
Semiconductor devices and materials
Semiconductor junctions

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19890483

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title = "Modification of Transconductance Characteristics For Ion-Implanted GaAs/AlGaAs Heterojunction MESFETs",

abstract = "Inverted GaAs/AIGaAs heterostructures grown by MOCVD have been used to fabricate conventional ion-implanted MESFETs. Two types of GaAs/AIGaAs heterojunctions are studied. One type has a compositionally graded AlGaAs layer which provides a built-in field and corresponding quantum well at the heterointerface. The other type has a constant-composition AlGaAs layer. 0.5 μm gate devices fabricated using the ungraded AlGaAs layer show a maximum extrinsic transconductance Gmof 280 mS/mm and a small Gmvariation over a gate voltage range of 1.5 V. In comparison, devices fabricated using the graded AlGaAs layer exhibit higher transconductance over all the gate voltages and an enhancement of Gmup to 420mS/mm at low gate bias.",

keywords = "FETs, Ion implantation, Semiconductor devices and materials, Semiconductor junctions",

author = "Wang, {G. W.} and M. Feng and Liaw, {Y. P.} and R. Kaliski and Lau, {C. L.} and C. Ito",

year = "1989",

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doi = "10.1049/el:19890483",

language = "English (US)",

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T1 - Modification of Transconductance Characteristics For Ion-Implanted GaAs/AlGaAs Heterojunction MESFETs

AU - Wang, G. W.

AU - Feng, M.

AU - Liaw, Y. P.

AU - Kaliski, R.

AU - Lau, C. L.

AU - Ito, C.

PY - 1989/9/1

Y1 - 1989/9/1

N2 - Inverted GaAs/AIGaAs heterostructures grown by MOCVD have been used to fabricate conventional ion-implanted MESFETs. Two types of GaAs/AIGaAs heterojunctions are studied. One type has a compositionally graded AlGaAs layer which provides a built-in field and corresponding quantum well at the heterointerface. The other type has a constant-composition AlGaAs layer. 0.5 μm gate devices fabricated using the ungraded AlGaAs layer show a maximum extrinsic transconductance Gmof 280 mS/mm and a small Gmvariation over a gate voltage range of 1.5 V. In comparison, devices fabricated using the graded AlGaAs layer exhibit higher transconductance over all the gate voltages and an enhancement of Gmup to 420mS/mm at low gate bias.

AB - Inverted GaAs/AIGaAs heterostructures grown by MOCVD have been used to fabricate conventional ion-implanted MESFETs. Two types of GaAs/AIGaAs heterojunctions are studied. One type has a compositionally graded AlGaAs layer which provides a built-in field and corresponding quantum well at the heterointerface. The other type has a constant-composition AlGaAs layer. 0.5 μm gate devices fabricated using the ungraded AlGaAs layer show a maximum extrinsic transconductance Gmof 280 mS/mm and a small Gmvariation over a gate voltage range of 1.5 V. In comparison, devices fabricated using the graded AlGaAs layer exhibit higher transconductance over all the gate voltages and an enhancement of Gmup to 420mS/mm at low gate bias.

KW - FETs

KW - Ion implantation

KW - Semiconductor devices and materials

KW - Semiconductor junctions

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JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Modification of Transconductance Characteristics For Ion-Implanted GaAs/AlGaAs Heterojunction MESFETs

Abstract

Keywords

ASJC Scopus subject areas

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