Modification of Transconductance Characteristics For Ion-Implanted GaAs/AlGaAs Heterojunction MESFETs

G. W. Wang, M. Feng, Y. P. Liaw, R. Kaliski, C. L. Lau, C. Ito

Research output: Contribution to journalArticlepeer-review

Abstract

Inverted GaAs/AIGaAs heterostructures grown by MOCVD have been used to fabricate conventional ion-implanted MESFETs. Two types of GaAs/AIGaAs heterojunctions are studied. One type has a compositionally graded AlGaAs layer which provides a built-in field and corresponding quantum well at the heterointerface. The other type has a constant-composition AlGaAs layer. 0.5 μm gate devices fabricated using the ungraded AlGaAs layer show a maximum extrinsic transconductance Gmof 280 mS/mm and a small Gmvariation over a gate voltage range of 1.5 V. In comparison, devices fabricated using the graded AlGaAs layer exhibit higher transconductance over all the gate voltages and an enhancement of Gmup to 420mS/mm at low gate bias.

Original languageEnglish (US)
Pages (from-to)713-715
Number of pages3
JournalElectronics Letters
Volume25
Issue number11
DOIs
StatePublished - Sep 1 1989
Externally publishedYes

Keywords

  • FETs
  • Ion implantation
  • Semiconductor devices and materials
  • Semiconductor junctions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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