MODFET ENSEMBLE MONTE CARLO MODEL INCLUDING THE QUASI-TWO-DIMENSIONAL ELECTRON GAS.

Umberto Ravaioli, David K. Ferry

Research output: Contribution to journalArticle

Abstract

The authors present an ensemble Monte Carlo model for the modulation-doped field-effect transistor in which quantization in the conduction channel is included using a two-subband triangular-well approximation. The subband population is investigated under different bias conditions in order to evaluate the influence of quantum effects on the electron conduction. It is found that, according to the model, the subband population may be severely reduced at high drain voltages, and that the appearance of stray conduction paths across the AlGaAs region may be a source of performance degradation.

Original languageEnglish (US)
Pages (from-to)677-681
Number of pages5
JournalIEEE Transactions on Electron Devices
VolumeED-33
Issue number5
StatePublished - Mar 1986
Externally publishedYes

Fingerprint

Two dimensional electron gas
High electron mobility transistors
electron gas
conduction
conduction electrons
aluminum gallium arsenides
high voltages
field effect transistors
degradation
modulation
Degradation
Electrons
Electric potential
approximation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

MODFET ENSEMBLE MONTE CARLO MODEL INCLUDING THE QUASI-TWO-DIMENSIONAL ELECTRON GAS. / Ravaioli, Umberto; Ferry, David K.

In: IEEE Transactions on Electron Devices, Vol. ED-33, No. 5, 03.1986, p. 677-681.

Research output: Contribution to journalArticle

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