Modeling wide bandgap GaInP photovoltaic cells for conversion efficiencies up to 16.5%

Yubo Sun, Kyle H. Montgomery, Xufeng Wang, Stephanie Tomasulo, Minjoo Larry Lee, Peter Bermel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Here we consider how to accurately model and design wide bandgap (Eg = 2.1 eV) GaInP photovoltaic cells. Detailed absorption data for the Ga-rich alloy is obtained by extrapolating literature values for InP and Ga0.5In0.5P. We then combined these values with estimates of carrier lifetime (0.1 ns) and interface recombination (9×105 cm/s) to construct detailed electro-optical models. They are found to accurately reproduce the EQE, Jsc, and Voc observed in published experimental devices. Small discrepancies of 0.1% are caused by slight differences in optical constants and interface recombination. This modeling process illustrates the major sources of loss, namely interface recombination between the emitter and window layer and low bulk minority carrier lifetimes in the active region. An improved design is also proposed, which involves adjusting the doping and thickness of key layers. These findings will help define a path towards increasing the performance of these wide bandgap cells to approach their theoretical limit - approximately 16.5%.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - Dec 14 2015
Externally publishedYes
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Keywords

  • InGaP
  • modeling
  • molecular beam epitaxy
  • n-i-p
  • wide-bandgap

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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