Modeling the ion beam-target interaction to reduce defects generated by ion beam deposition

Thomas Cardinal, Daniel Andruczyk, He Yu, Vibhu Jindal, Patrick Kearney, David N Ruzic

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The defectivity of extreme ultraviolet (EUV) mask blanks is a critical issue in EUV lithography. It has been observed that target surfaces can develop many formations that generate defects during ion beam sputtering. Two simulation models were developed to study the surface morphology and evolution of a target surface under different ion beam conditions. Extensive simulations were performed to understand the interaction of the ion beam with the target surface. The modeling was able to mimic the growth and the elimination of these formations through normal incidence bombardment as verified by ion beam sputtering experiments.

Original languageEnglish (US)
Title of host publicationExtreme Ultraviolet (EUV) Lithography III
DOIs
StatePublished - May 31 2012
EventExtreme Ultraviolet (EUV) Lithography III - San Jose, CA, United States
Duration: Feb 13 2012Feb 16 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8322
ISSN (Print)0277-786X

Other

OtherExtreme Ultraviolet (EUV) Lithography III
CountryUnited States
CitySan Jose, CA
Period2/13/122/16/12

Keywords

  • Defects
  • EUV lithography
  • EUV mask blanks
  • Ion beam deposition system
  • Target

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Cardinal, T., Andruczyk, D., Yu, H., Jindal, V., Kearney, P., & Ruzic, D. N. (2012). Modeling the ion beam-target interaction to reduce defects generated by ion beam deposition. In Extreme Ultraviolet (EUV) Lithography III [83222Q] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8322). https://doi.org/10.1117/12.916878