@inproceedings{06d5ebf6cdf54bc89d94ca9b12abfbff,
title = "Modeling the ion beam-target interaction to reduce defects generated by ion beam deposition",
abstract = "The defectivity of extreme ultraviolet (EUV) mask blanks is a critical issue in EUV lithography. It has been observed that target surfaces can develop many formations that generate defects during ion beam sputtering. Two simulation models were developed to study the surface morphology and evolution of a target surface under different ion beam conditions. Extensive simulations were performed to understand the interaction of the ion beam with the target surface. The modeling was able to mimic the growth and the elimination of these formations through normal incidence bombardment as verified by ion beam sputtering experiments.",
keywords = "Defects, EUV lithography, EUV mask blanks, Ion beam deposition system, Target",
author = "Thomas Cardinal and Daniel Andruczyk and He Yu and Vibhu Jindal and Patrick Kearney and Ruzic, {David N}",
year = "2012",
doi = "10.1117/12.916878",
language = "English (US)",
isbn = "9780819489784",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Extreme Ultraviolet (EUV) Lithography III",
note = "Extreme Ultraviolet (EUV) Lithography III ; Conference date: 13-02-2012 Through 16-02-2012",
}