Modeling of the output and transfer characteristics of graphene field-effect transistors

Brett W. Scott, Jean Pierre Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions for the conductance, transconductance, and saturation voltage are derived. We found good agreement with the experimental data of Meric et al. Nat. Nanotechnol. vol. 3, p. 684, 2008 without assuming carrier density-dependent velocity saturation.

Original languageEnglish (US)
Article number5709989
Pages (from-to)1113-1119
Number of pages7
JournalIEEE Transactions on Nanotechnology
Volume10
Issue number5
DOIs
StatePublished - Sep 1 2011

Keywords

  • Graphene
  • high field effect
  • saturation velocity
  • simulation
  • transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

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