TY - GEN
T1 - Modeling of the Charge-Voltage Characteristics of AlScN/AlN/GaN Heterostructures
AU - Wu, Bohao
AU - Rakheja, Shaloo
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - With evolving research into III-nitride materials for various high-frequency applications, the ternary material ScxAl1-xN (referred to as ScAlN throughout) has emerged as an attractive candidate due to its exceptional piezoelectric effect (the piezoelectric moduli e33=9.125x+1.471(1-x)-6.625x(1-x) increases rapidly with an increasing x [1]), ferroelectricity [2], and high spontaneous polarization [3]. Current research in ScAlN/AlN/GaN heterostructures is at a nascent stage and the potential benefits of utilizing ScAlN in high electron mobility transistors (HEMTs) are not quantified. We study the impact of alloy composition and barrier thickness on the density and the gate modulation efficiency of the two-dimensional electron gas (2DEG) in various ScAlN/AlN/GaN heterostructures (Figs. 1(a)&(b)). We identify the design constraints that must be met for this heterojunction to be used effectively within a HEMT architecture. An analytic charge-voltage (Q-V) and capacitance-voltage (C-V) model is developed and validated against Schrodinger- Poisson simulations. The analytic model is extended to 2D to account for the impact of drain bias on the channel charge for an ScAlN/AlN/GaN HEMT, and the role of channel transmission coefficient (i.e., diffusive versus quasi-ballistic (QB) transport) on Q-V and C-V is examined.
AB - With evolving research into III-nitride materials for various high-frequency applications, the ternary material ScxAl1-xN (referred to as ScAlN throughout) has emerged as an attractive candidate due to its exceptional piezoelectric effect (the piezoelectric moduli e33=9.125x+1.471(1-x)-6.625x(1-x) increases rapidly with an increasing x [1]), ferroelectricity [2], and high spontaneous polarization [3]. Current research in ScAlN/AlN/GaN heterostructures is at a nascent stage and the potential benefits of utilizing ScAlN in high electron mobility transistors (HEMTs) are not quantified. We study the impact of alloy composition and barrier thickness on the density and the gate modulation efficiency of the two-dimensional electron gas (2DEG) in various ScAlN/AlN/GaN heterostructures (Figs. 1(a)&(b)). We identify the design constraints that must be met for this heterojunction to be used effectively within a HEMT architecture. An analytic charge-voltage (Q-V) and capacitance-voltage (C-V) model is developed and validated against Schrodinger- Poisson simulations. The analytic model is extended to 2D to account for the impact of drain bias on the channel charge for an ScAlN/AlN/GaN HEMT, and the role of channel transmission coefficient (i.e., diffusive versus quasi-ballistic (QB) transport) on Q-V and C-V is examined.
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U2 - 10.1109/DRC55272.2022.9855781
DO - 10.1109/DRC55272.2022.9855781
M3 - Conference contribution
AN - SCOPUS:85137721028
T3 - Device Research Conference - Conference Digest, DRC
BT - 2022 Device Research Conference, DRC 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 Device Research Conference, DRC 2022
Y2 - 26 June 2022 through 29 June 2022
ER -