Modeling of substrate noise in monolithic integrated circuits

George Manetas, Andreas C Cangellaris

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A convenient model is presented for the expedient calculation of semiconductor substrate-induced noise coupling under quasi-static conditions. The proposed model is motivated by the desire to provide for a quick means for predictive assessment of substrate noise levels with computational efficiency appropriate for noise-aware floorplanning and routing considerations early in the design phase. While computationally efficient, the quasi-static attributes of the model call for an assessment of the frequency range of its validity. To provide for this, a fullwave electrodynamic model is used to derive a quantity, termed dynamic factor, as a means to assess the accuracy of the quasi-static model versus frequency and substrate properties.

Original languageEnglish (US)
Title of host publication2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
Pages172-175
Number of pages4
DOIs
StatePublished - Apr 23 2010
Event2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, United States
Duration: Jan 11 2010Jan 13 2010

Publication series

Name2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers

Other

Other2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010
CountryUnited States
CityNew Orleans, LA
Period1/11/101/13/10

Keywords

  • Electromagnetic interference
  • Modeling
  • Substrate noise

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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