Modeling of InGaAs MSM photodetector for circuit-level simulation

Andrew Xiang; Walter Wohlmuth; Patrick Fay; Sung Mo Kang; Ilesanmi Adesida

doi:10.1109/50.495150

Modeling of InGaAs MSM photodetector for circuit-level simulation

Andrew Xiang, Walter Wohlmuth, Patrick Fay, Sung Mo Kang, Ilesanmi Adesida

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Abstract

An accurate model for In_0.53Ga_0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes.

Original language	English (US)
Pages (from-to)	716-723
Number of pages	8
Journal	Journal of Lightwave Technology
Volume	14
Issue number	5
DOIs	https://doi.org/10.1109/50.495150
State	Published - May 1996

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1109/50.495150

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title = "Modeling of InGaAs MSM photodetector for circuit-level simulation",

abstract = "An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes.",

author = "Andrew Xiang and Walter Wohlmuth and Patrick Fay and Kang, {Sung Mo} and Ilesanmi Adesida",

note = "Funding Information: Patrick Fay received the B.S. degree from the University of Notre Dame in 1991, and the M.S. degree from the University of Illinois in 1993. He is currently pursuing the Ph.D. degree at the University of Illinois. From 1992 to 1994, he was a National Science Foundation Graduate Research Fellow.",

year = "1996",

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doi = "10.1109/50.495150",

language = "English (US)",

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AU - Xiang, Andrew

AU - Wohlmuth, Walter

AU - Fay, Patrick

AU - Kang, Sung Mo

AU - Adesida, Ilesanmi

N1 - Funding Information: Patrick Fay received the B.S. degree from the University of Notre Dame in 1991, and the M.S. degree from the University of Illinois in 1993. He is currently pursuing the Ph.D. degree at the University of Illinois. From 1992 to 1994, he was a National Science Foundation Graduate Research Fellow.

PY - 1996/5

Y1 - 1996/5

N2 - An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes.

AB - An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes.

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Modeling of InGaAs MSM photodetector for circuit-level simulation

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