TY - GEN
T1 - Modeling of Content addressable memory using 2D Reconfigurable Transistors
AU - Tunga, Ashwin
AU - Kang, Junzhe
AU - Zhao, Ziing
AU - Shukla, Ankit
AU - Zhu, Wenjuan
AU - Rakheja, Shaloo
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - Content-addressable memory (CAM) compares input search data with stored data, returning the address upon a match. CAMs offer high-speed parallel search, making them ideal for associative memory applications. CAMs are categorized into binary (BCAMs) and ternary CAMs (TCAMs). BCAMs store two states and require an exact match for a successful search, while TCAMs can store a third state, 'don't care' or 'X', always resulting in a match. Traditionally, CAMs are implemented using CMOS static random-access memory (SRAM). However, SRAM-based CAMs use ≥ 9 transistors, increasing the area and power dissipation. Recently, 2D reconfigurable transistors (RFETs) have emerged as a promising technology for TCAMs. 2D-RFET TCAMs offer high on/off ratio, low power consumption, non-volatile data storage, and low area requirement, using only 1T for realizing a CAM [1].
AB - Content-addressable memory (CAM) compares input search data with stored data, returning the address upon a match. CAMs offer high-speed parallel search, making them ideal for associative memory applications. CAMs are categorized into binary (BCAMs) and ternary CAMs (TCAMs). BCAMs store two states and require an exact match for a successful search, while TCAMs can store a third state, 'don't care' or 'X', always resulting in a match. Traditionally, CAMs are implemented using CMOS static random-access memory (SRAM). However, SRAM-based CAMs use ≥ 9 transistors, increasing the area and power dissipation. Recently, 2D reconfigurable transistors (RFETs) have emerged as a promising technology for TCAMs. 2D-RFET TCAMs offer high on/off ratio, low power consumption, non-volatile data storage, and low area requirement, using only 1T for realizing a CAM [1].
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U2 - 10.1109/DRC61706.2024.10605524
DO - 10.1109/DRC61706.2024.10605524
M3 - Conference contribution
AN - SCOPUS:85201059589
T3 - Device Research Conference - Conference Digest, DRC
BT - DRC 2024 - 82nd Device Research Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 82nd Device Research Conference, DRC 2024
Y2 - 24 June 2024 through 26 June 2024
ER -