Modeling of Charge Carrier Transport in Photoetching of Gallium Arsenide

Edna Mannheim, Richard C. Alkire, Robert L. Sani

Research output: Contribution to journalArticlepeer-review


Wet photoelectrochemical etching of GaAs was investigated with the use of a numerical model that calculated electron, hole, and potential distributions in a selectively illuminated semiconductor. The Galerkin finite element method was used to solve the Poisson equation for the potential and the species transport equations for holes, and electrons in two dimensions. The transport equations included generation, recombination, diffusion, and migration terms. A technique was developed for examining the sensitivity of the distribution of holes, electrons, and the potential to the parameters of the system including the surface reaction rate constant, diffusion coefficients, doping concentration, light intensity, wavelength, and the recombination length. The sensitivity analysis technique facilitated identification of parameters for which the behavior of this complex, nonlinearly coupled system is most sensitive.

Original languageEnglish (US)
Pages (from-to)546-554
Number of pages9
JournalJournal of the Electrochemical Society
Issue number2
StatePublished - Feb 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment


Dive into the research topics of 'Modeling of Charge Carrier Transport in Photoetching of Gallium Arsenide'. Together they form a unique fingerprint.

Cite this