Modeling of black phosphorus vertical TFETs without chemical doping for drain

Shang Chun Lu, Youngseok Kim, Matthew J. Gilbert, Umberto Ravaioli, Mohamed Y. Mohamed

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new vertical tunnel FET design based on black phosphorus is presented in this paper adopting asymmetric layer numbers for top and bottom layer with undoped drain. The results show that the SS and Ion/Ioff can be maintained below 10 mV/dec and beyond 105, respectively, when channel length is down to 3 nm.

Original languageEnglish (US)
Title of host publication2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages345-347
Number of pages3
ISBN (Electronic)9784863486102
DOIs
StatePublished - Oct 25 2017
Event2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 - Kamakura, Japan
Duration: Sep 7 2017Sep 9 2017

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2017-September

Other

Other2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
CountryJapan
CityKamakura
Period9/7/179/9/17

Keywords

  • DFT
  • Non-equilibrium Green's Function
  • black phosphorus
  • tunnel FET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

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