Modeling Fully Depleted SOI MOSFETs in 3D Using Recursive Scattering Matrices

M. J. Gilbert, R. Akis, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

Abstract

As the semiconductor industry pushes towards ever decreasing device sizes, the need for an efficient yet accurate simulation method increases. We present a different approach to modeling ultra small semiconductor devices through the use of recursive scattering matrices. This approach is a completely quantum mechanical approach in three dimensions, yet does not suffer from excessive computation time or resources. While the transport in most small semiconductor devices is typically 2D in nature, with a 3D model we are capable of incorporating the interaction of the 3D modes in the contacts with the 2D modes in the active regions. We demonstrate this approach by presenting results for a short channel fully-depleted SOI (Silicon On Insulator) MOSFET. We present results using both hardwall potentials and self-consistent potentials as calculated through the use of an iterative Poisson solver.

Original languageEnglish (US)
Pages (from-to)329-334
Number of pages6
JournalJournal of Computational Electronics
Volume2
Issue number2-4
DOIs
StatePublished - Dec 1 2003
Externally publishedYes

Keywords

  • 3D quantum simulation
  • SOI MOSFET
  • scattering matrices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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