Modeling and Design of SiC-based High-Frequency Photoconductive Switches

S. Rakheja, L. Huang, S. Hau-Riege, S. E. Harrison, L. F. Voss, A. M. Conway

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents the design of a SiC-based photoconductive semiconductor switch (PCSS) in which a picosecond laser pulse generates excess free electrons and holes that are rapidly separated by applying a lateral electric field across the switch. Due to the high velocity and low recombination rate of carriers in high-quality, semi-insulating SiC, the PCSS can potentially operate at terahertz frequency at 10's of watts of output power, thereby improving the frequency-power-size tradeoff of high-electron mobility transistors and traveling wave tubes. The key contributions of this paper are as follows. First, we quantify the impact of material properties, doping, traps, laser spot size, and electric field on the transient response of the switch. Second, we develop a new compact model that can describe the performance of the PCSS over broad operating conditions. Excellent agreement of the model against numerical data is demonstrated. Finally, we identify an upper bound on the frequency of operation of the switch and obtain 'frequency versus length' and 'frequency versus laser spot size' scaling under low optical generation conditions.

Original languageEnglish (US)
Title of host publication4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728125381
DOIs
StatePublished - Apr 2020
Event4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Penang, Malaysia
Duration: Apr 6 2020Apr 21 2020

Publication series

Name4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

Conference

Conference4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
CountryMalaysia
CityPenang
Period4/6/204/21/20

Keywords

  • High-frequency RF
  • compact modeling
  • photoconductivit
  • wide bandgap materials

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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