Modeling and characterization of deep trench isolation structures

S. Lee, R. Bashir

Research output: Contribution to journalArticlepeer-review


In this paper, we present a simple equivalent electrical circuit model and sidewall interface characterization results for a deep trench isolation structure. The trench structures used in the study consisted of n-silicon/undoped trench/n-silicon. The trenches were filled with undoped polycrystalline silicon and the trench sidewall was lined with thermal oxide and a deposited silicon nitride. The capacitance-voltage characteristics across the trench were measured and compared against the model predictions. The circuit model includes the effect of the space-charge region and recombination-generation currents in the undoped polycrystalline silicon trench fill material. The Terman method was used to extract the silicon/oxide sidewall interface density and the mid gap value was found to be less than 10-10 #/cm2-eV.

Original languageEnglish (US)
Pages (from-to)295-300
Number of pages6
JournalMicroelectronics Journal
Issue number4
StatePublished - Apr 1 2001
Externally publishedYes


  • High voltage isolation
  • Trench isolation
  • Trench modeling
  • Trench sidewall interface

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering


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