TY - GEN
T1 - Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence
AU - Min, Qiu
AU - Li, Er Ping
AU - Jin, Jian Ming
N1 - This work was partially supported by the National Natural Science Foundation of China under Grant No. 61371031 and 61571395, and by the Fundamental Research Funds for the Central Universities under Grant No. 2017XZZX009.
PY - 2019/6
Y1 - 2019/6
N2 - This paper presents a comprehensive modeling and analysis for the metal-oxide-semiconductor (MOS) capacitance of through silicon via in consideration of the temperature dependence. The MOS effect is physically modeled by a Poisson-Boltzmann equation with the distribution of mobile charge carriers included. Temperature-dependent parameters considered in the analysis are the intrinsic carrier density, permittivity, and bandgap of the silicon. With the equation solved, the variations of MOS capacitance with the bias voltage, operating frequency, oxide charge, and temperature can be obtained. The calculated MOS capacitances under different temperature show a good agreement with the measurement results, which verifies the accuracy of the presented modeling and analysis.
AB - This paper presents a comprehensive modeling and analysis for the metal-oxide-semiconductor (MOS) capacitance of through silicon via in consideration of the temperature dependence. The MOS effect is physically modeled by a Poisson-Boltzmann equation with the distribution of mobile charge carriers included. Temperature-dependent parameters considered in the analysis are the intrinsic carrier density, permittivity, and bandgap of the silicon. With the equation solved, the variations of MOS capacitance with the bias voltage, operating frequency, oxide charge, and temperature can be obtained. The calculated MOS capacitances under different temperature show a good agreement with the measurement results, which verifies the accuracy of the presented modeling and analysis.
KW - Electromagnetic interference
KW - MOS capacitance
KW - Temperature dependence
KW - Through silicon via
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U2 - 10.23919/EMCTokyo.2019.8893953
DO - 10.23919/EMCTokyo.2019.8893953
M3 - Conference contribution
AN - SCOPUS:85075267903
T3 - 2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility, EMC Sapporo/APEMC 2019
SP - 350
EP - 353
BT - 2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility, EMC Sapporo/APEMC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility, EMC Sapporo/APEMC 2019
Y2 - 3 June 2019 through 7 June 2019
ER -