Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence

Qiu Min, Er Ping Li, Jian Ming Jin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a comprehensive modeling and analysis for the metal-oxide-semiconductor (MOS) capacitance of through silicon via in consideration of the temperature dependence. The MOS effect is physically modeled by a Poisson-Boltzmann equation with the distribution of mobile charge carriers included. Temperature-dependent parameters considered in the analysis are the intrinsic carrier density, permittivity, and bandgap of the silicon. With the equation solved, the variations of MOS capacitance with the bias voltage, operating frequency, oxide charge, and temperature can be obtained. The calculated MOS capacitances under different temperature show a good agreement with the measurement results, which verifies the accuracy of the presented modeling and analysis.

Original languageEnglish (US)
Title of host publication2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility, EMC Sapporo/APEMC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages350-353
Number of pages4
ISBN (Electronic)9784885523229
DOIs
StatePublished - Jun 2019
Event2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility, EMC Sapporo/APEMC 2019 - Sapporo, Japan
Duration: Jun 3 2019Jun 7 2019

Publication series

Name2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility, EMC Sapporo/APEMC 2019

Conference

Conference2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility, EMC Sapporo/APEMC 2019
CountryJapan
CitySapporo
Period6/3/196/7/19

Keywords

  • Electromagnetic interference
  • MOS capacitance
  • Temperature dependence
  • Through silicon via

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Information Systems and Management

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