Model order reduction for quantum transport simulation of band-to-band tunneling devices

Jun Z. Huang, Lining Zhang, Weng Cho Chew, Chi Yung Yam, Li Jun Jiang, Guan Hua Chen, Mansun Chan

Research output: Contribution to journalArticlepeer-review

Abstract

Simulations of nanoelectronic devices with nonequilibrium Greens function are computationally very intensive, in particular, when combined with multiband approaches, such as the k p methods. To reduce the cost and make the simulation of realistic devices tractable, we have developed a model order reduction method for the simulation of hole transport in silicon nanowires using three- and six-band k p models. It is shown in this paper that, with a spurious band elimination process, the method can be readily extended to the eight-band case that enables us to simulate band-to-band tunneling devices. The method is demonstrated via constructing reduced models for indium arsenide (InAs) nanowires and simulation of I-V characteristics of InAs tunneling field-effect transistors (TFETs). The results indicate that significant model reduction can be achieved with good accuracy retained. The method is then applied to study InAs TFETs with different channel orientations and source-pocket TFETs with n-p-i-p doping profiles.

Original languageEnglish (US)
Article number6704314
Pages (from-to)561-568
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume61
Issue number2
DOIs
StatePublished - Feb 2014

Keywords

  • Band-to-band tunneling (BTBT)
  • eight-band k p model
  • indium arsenide (InAs) nanowires
  • model order reduction (MOR)
  • nonequilibrium Greens function (NEGF)
  • source-pocket TFETs
  • tunneling field-effect transistors (TFETs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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