We propose a simple model which accounts for the major features and systematics of experiments on the c=axis resistivity, ρc for La2-xSrxCuO4, YBa2Cu3O6+x, and Bi2Sr2CaCu2O8. We argue that the c-axis resistivity can be separated into contributions from in-plane dephasing and the c-axis "barrier" scattering processes, with the low-temperature semiconductorlike behavior of ρc arising from the suppression of the in-plane density of states measured by in-plane magnetic Knight shift experiments. We report on predictions for ρc in impurity-doped YBa2Cu3O6+x materials.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1996|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics