Model of c-axis resistivity of high cuprates

We propose a simple model which accounts for the major features and systematics of experiments on the c=axis resistivity, ρ_c for La_2-xSr_xCuO₄, YBa₂Cu₃O_6+x, and Bi₂Sr₂CaCu₂O₈. We argue that the c-axis resistivity can be separated into contributions from in-plane dephasing and the c-axis "barrier" scattering processes, with the low-temperature semiconductorlike behavior of ρ_c arising from the suppression of the in-plane density of states measured by in-plane magnetic Knight shift experiments. We report on predictions for ρ_c in impurity-doped YBa₂Cu₃O_6+x materials.