Abstract
We propose a simple model which accounts for the major features and systematics of experiments on the c=axis resistivity, ρc for La2-xSrxCuO4, YBa2Cu3O6+x, and Bi2Sr2CaCu2O8. We argue that the c-axis resistivity can be separated into contributions from in-plane dephasing and the c-axis "barrier" scattering processes, with the low-temperature semiconductorlike behavior of ρc arising from the suppression of the in-plane density of states measured by in-plane magnetic Knight shift experiments. We report on predictions for ρc in impurity-doped YBa2Cu3O6+x materials.
Original language | English (US) |
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Pages (from-to) | 8253-8256 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 53 |
Issue number | 13 |
DOIs | |
State | Published - 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics