@article{181405f3aad148189bd9ba035a9fc539,
title = "Model and observations of dielectric charge in thermally oxidized silicon resonators",
abstract = "This paper investigates the effects of dielectric charge on resonant frequency in thermally oxidized silicon resonators hermetically encapsulated using epi-seal. SiO2 coatings are effective for passive temperature compensation of resonators but make the devices more susceptible to charging-related issues. We present a theoretical model for the electromechanical effects of charge trapped in the dielectrics within the transduction gap of a resonator. Observations of resonance frequency against varying resonator bias voltage are fitted to this model in order to obtain estimates for the magnitude of the trapped oxide charge. Statistics collected from wet-and dry-oxidized devices show that lower fixed oxide charge can be expected upon dry oxidation. In addition, observations of time-varying resonator frequency indicate the presence of mobile oxide charge in a series of voltage biasing and temperature experiments.",
keywords = "Charging, Dielectrics, Frequency drift, Reliability, Resonators, Silicon dioxide",
author = "Gaurav Bahl and Renata Melamud and Bongsang Kim and Chandorkar, {Saurabh A.} and Salvia, {James C.} and Hopcroft, {Matthew A.} and David Elata and Hennessy, {Robert G.} and Candler, {Rob N.} and Howe, {Roger T.} and Kenny, {Thomas W.}",
note = "Funding Information: Manuscript received April 7, 2009; revised August 17, 2009. First published December 4, 2009; current version published February 3, 2010. This work was supported in part by the Defense Advanced Research Projects Agency (DARPA) under Grant HR0011-06-0049 (Dr. D. L. Polla, Program Manager); by Bosch; by Epson; by HP; by Agilent; by Boeing; by Qualcomm; by DARPA Harsh Environment Robust Micromechanical Technology under Grant ONR N66001-03-1-8942; by the National Nanofabrication Users Network facilities, funded by the National Science Foundation under Award ECS-9731294; and by the National Science Foundation Instrumentation for Materials Research Program under Grant DMR 9504099. Subject Editor C. Hierold. Funding Information: The authors would like to thank G. Yama, H. Lee, Y. Q. Qu, S. Yoneoka, Dr. C. M. Jha, Prof. C. Nguyen, Dr. A. Partridge, M. Lutz, and Dr. E. Perozziello for their guidance and support. Additional support was provided in part by a National Science Foundation Graduate Fellowship for J. C. Salvia, and in part by a Stanford Graduate Fellowship for Dr. R. Melamud. This work was performed at the Center on Interfacial Engineering for Microelectromechanical Systems.",
year = "2010",
month = feb,
doi = "10.1109/JMEMS.2009.2036274",
language = "English (US)",
volume = "19",
pages = "162--174",
journal = "Journal of Microelectromechanical Systems",
issn = "1057-7157",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}