MOCVD-grown, 1.3 μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers

Steven R. Kurtz, Robert M. Sieg, Andrew A. Allerman, Kent D Choquette, Ryan L. Naone

Research output: Contribution to journalArticlepeer-review


InxGa1-xAs1-yNy quaternary alloys offer the promise of longer wavelength, ≥ 1.3 μm optical transceivers grown on GaAs substrates. To achieve acceptable radiative efficiencies at 1.3 μm, highly-strained InGaAsN quantum wells (x ≈ 0.4, y ≈ 0.005) are being developed as laser active regions. By introducing GaAsP layers into the active region for strain-compensation, gain can be increased using multiple InGaAsN quantum wells. In this work, we report the first strain-compensated, 1.3 μm InGaAsN MQW lasers. Our devices were grown by metal-organic chemical vapor deposition. Lasers with InGaAsN quantum well active regions are proving superior to lasers constructed with competing active region materials. Under pulsed operation, our 1.3 μm InGaAsN lasers displayed negligible blue-shift from the low-injection LED emission, and state-of-the-art characteristic temperature (159 K) was obtained for a 1.3 μm laser.

Original languageEnglish (US)
Pages (from-to)170-175
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2001


  • Lasers
  • Metal-organic chemical vapor deposition
  • Strain-compensation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'MOCVD-grown, 1.3 μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers'. Together they form a unique fingerprint.

Cite this