Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics

Wenjuan Zhu, Jin Ping Han, T. P. Ma

Research output: Contribution to journalArticlepeer-review

Abstract

Accurate measurements and degradation mechanisms of the channel mobility for MOSFETs with HfO2 as the gate dielectric have been systematically studied in this paper. The error in mobility extraction caused by a high density of interface traps for a MOSFET with high-k gate dielectric has been analyzed, and a new method to correct this error has been proposed. Other sources of error in mobility extraction, including channel resistance, gate leakage current, and contact resistance for a MOSFET with ultrathin high-k dielectric have also been investigated and reported in this paper. Based on the accurately measured channel mobility, we have analyzed the degradation mechanisms of channel mobility for a MOSFET with HfO2 as the gate dielectric. The mobility degradation due to Coulomb scatting arising from interface trapped charges, and that due to remote soft optical phonon scattering are discussed.

Original languageEnglish (US)
Pages (from-to)98-105
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume51
Issue number1
DOIs
StatePublished - Jan 1 2004
Externally publishedYes

Keywords

  • High-k dielectrics
  • MOSFETs
  • Mobility degradation
  • Mobility measurement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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