Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics

Wenjuan Zhu; Jin Ping Han; T. P. Ma

doi:10.1109/TED.2003.821384

Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics

Wenjuan Zhu, Jin Ping Han, T. P. Ma

Research output: Contribution to journal › Article › peer-review

Abstract

Accurate measurements and degradation mechanisms of the channel mobility for MOSFETs with HfO₂ as the gate dielectric have been systematically studied in this paper. The error in mobility extraction caused by a high density of interface traps for a MOSFET with high-k gate dielectric has been analyzed, and a new method to correct this error has been proposed. Other sources of error in mobility extraction, including channel resistance, gate leakage current, and contact resistance for a MOSFET with ultrathin high-k dielectric have also been investigated and reported in this paper. Based on the accurately measured channel mobility, we have analyzed the degradation mechanisms of channel mobility for a MOSFET with HfO₂ as the gate dielectric. The mobility degradation due to Coulomb scatting arising from interface trapped charges, and that due to remote soft optical phonon scattering are discussed.

Original language	English (US)
Pages (from-to)	98-105
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	1
DOIs	https://doi.org/10.1109/TED.2003.821384
State	Published - Jan 2004
Externally published	Yes

Keywords

High-k dielectrics
MOSFETs
Mobility degradation
Mobility measurement

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/TED.2003.821384

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abstract = "Accurate measurements and degradation mechanisms of the channel mobility for MOSFETs with HfO2 as the gate dielectric have been systematically studied in this paper. The error in mobility extraction caused by a high density of interface traps for a MOSFET with high-k gate dielectric has been analyzed, and a new method to correct this error has been proposed. Other sources of error in mobility extraction, including channel resistance, gate leakage current, and contact resistance for a MOSFET with ultrathin high-k dielectric have also been investigated and reported in this paper. Based on the accurately measured channel mobility, we have analyzed the degradation mechanisms of channel mobility for a MOSFET with HfO2 as the gate dielectric. The mobility degradation due to Coulomb scatting arising from interface trapped charges, and that due to remote soft optical phonon scattering are discussed.",

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AU - Zhu, Wenjuan

AU - Han, Jin Ping

AU - Ma, T. P.

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N2 - Accurate measurements and degradation mechanisms of the channel mobility for MOSFETs with HfO2 as the gate dielectric have been systematically studied in this paper. The error in mobility extraction caused by a high density of interface traps for a MOSFET with high-k gate dielectric has been analyzed, and a new method to correct this error has been proposed. Other sources of error in mobility extraction, including channel resistance, gate leakage current, and contact resistance for a MOSFET with ultrathin high-k dielectric have also been investigated and reported in this paper. Based on the accurately measured channel mobility, we have analyzed the degradation mechanisms of channel mobility for a MOSFET with HfO2 as the gate dielectric. The mobility degradation due to Coulomb scatting arising from interface trapped charges, and that due to remote soft optical phonon scattering are discussed.

AB - Accurate measurements and degradation mechanisms of the channel mobility for MOSFETs with HfO2 as the gate dielectric have been systematically studied in this paper. The error in mobility extraction caused by a high density of interface traps for a MOSFET with high-k gate dielectric has been analyzed, and a new method to correct this error has been proposed. Other sources of error in mobility extraction, including channel resistance, gate leakage current, and contact resistance for a MOSFET with ultrathin high-k dielectric have also been investigated and reported in this paper. Based on the accurately measured channel mobility, we have analyzed the degradation mechanisms of channel mobility for a MOSFET with HfO2 as the gate dielectric. The mobility degradation due to Coulomb scatting arising from interface trapped charges, and that due to remote soft optical phonon scattering are discussed.

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Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics

Abstract

Keywords

ASJC Scopus subject areas

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