TY - JOUR
T1 - Mobility enhancement in dual-channel P-MOSFETs
AU - Jung, Jongwan
AU - Yu, Shaofeng
AU - Lee, Minjoo L.
AU - Hoyt, Judy L.
AU - Fitzgerald, Eugene A.
AU - Antoniadis, Dimitri A.
N1 - Funding Information:
Manuscript received February 2, 2004; revised May 26, 2004. This work was supported by DARPA, SMA, and MARCO. The review of this paper was arranged by Editor M.-C. Chang. J. Jung, J. L. Hoyt, and D. A. Antoniadis are with Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 USA. S. Yu was with Intel Corporation, Hillsboro, OR 97124 USA. He is now with Texas Instruments, Inc, Dallas, TX 75243 USA (e-mail: [email protected]). M. L. Lee and E. A. Fitzgerald are with the Department of Materials Science, Massachusetts Institute of Technology, Cambridge, MA 02139 USA. Digital Object Identifier 10.1109/TED.2004.833588
PY - 2004/9
Y1 - 2004/9
N2 - Hole mobility is characterized in P-MOSFETs with a layered substrate consisting of tensile strained Si cap on a compressively strained Si0.4 Ge0.6 buried layer grown pseudomorphically to a relaxed Si0.7 Ge0.3 virtual substrate. Besides the expected mobility enhancement in the strained Si cap and in the buried Si0.4Ge0.6 layer, a second peak in mobility versus total inversion carrier areal density curve was observed under strong inversion conditions in thin Si-cap layer samples. Qualitatively, this reversed mobility trend can be correlated to the transition of inversion conduction from the buried layer to the surface layer, but quantitative analysis reveals that the surface layer mobility in thin Si-cap samples needs to be substantially larger than that in thick-cap samples, if it can be assumed that mobility is a function of transverse field. Further analysis found that, if it is assumed that mobility is a function of inversion carrier density, measured mobility curves can be matched consistently with a single set of mobility-carrier-density relationship.
AB - Hole mobility is characterized in P-MOSFETs with a layered substrate consisting of tensile strained Si cap on a compressively strained Si0.4 Ge0.6 buried layer grown pseudomorphically to a relaxed Si0.7 Ge0.3 virtual substrate. Besides the expected mobility enhancement in the strained Si cap and in the buried Si0.4Ge0.6 layer, a second peak in mobility versus total inversion carrier areal density curve was observed under strong inversion conditions in thin Si-cap layer samples. Qualitatively, this reversed mobility trend can be correlated to the transition of inversion conduction from the buried layer to the surface layer, but quantitative analysis reveals that the surface layer mobility in thin Si-cap samples needs to be substantially larger than that in thick-cap samples, if it can be assumed that mobility is a function of transverse field. Further analysis found that, if it is assumed that mobility is a function of inversion carrier density, measured mobility curves can be matched consistently with a single set of mobility-carrier-density relationship.
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U2 - 10.1109/TED.2004.833588
DO - 10.1109/TED.2004.833588
M3 - Article
AN - SCOPUS:4444270645
SN - 0018-9383
VL - 51
SP - 1424
EP - 1431
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 9
ER -