Low-resistance Ohmic contacts on Al0.3 Ga0.7 NGaN high electron mobility transistors (HEMTs) were formed with a MoAlMoAu metallization scheme which was annealed at a relatively low temperature of 500 °C. A contact resistance of 0.11±0.05 Σ mm and a specific contact resistivity of 2.63× 10-7 Σ cm2 were achieved. This represents the best low-temperature-annealed Ohmic contacts on GaN-based HEMTs achieved to date.
|Original language||English (US)|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Mar 1 2006|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering