Mixed technology of ion implantation and heteroepitaxy: Ion-implanted InxGa1-xAs/GaAs MESFETs

G. W. Wang, M. Feng, R. Kaliski, Y. P. Liaw, C. L. Lau, C. Ito

Research output: Contribution to conferencePaper

Abstract

State-of-the-art FET performance with ft's of 55 and 61 GHz has been achieved using 0.5-μm-gate In0.1Ga0.9As and graded InxGa1-xAs MESFETs, respectively. The material growth and device farbication are described, and the device characteritics are reported. In comparison to the In0.1Ga0.9As MESFET, the graded-material MESFET shows a better Schottky gate, which is essential for device performance. This novel InGaAs MESFET is of interest for InGaAs-based circuits that are suitable, among other applications, for long-wavelength fiber-optic communication.

Original languageEnglish (US)
Pages111-118
Number of pages8
StatePublished - Dec 1 1989
Externally publishedYes
EventProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: Aug 7 1989Aug 9 1989

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period8/7/898/9/89

ASJC Scopus subject areas

  • Engineering(all)

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    Wang, G. W., Feng, M., Kaliski, R., Liaw, Y. P., Lau, C. L., & Ito, C. (1989). Mixed technology of ion implantation and heteroepitaxy: Ion-implanted InxGa1-xAs/GaAs MESFETs. 111-118. Paper presented at Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .