Mitigation of AO spurious modes in AlN MEMS resonators with SiO2 addendums

Anming Gao, Ruochen Lu, Songbin Gong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents an AO spurious mode mitigation technique for Aluminum Nitride (AlN) laterally vibrating resonators (LVRs). The technique attaches two identical SiO2 addendums to the lateral edges of the suspended AlN resonator body to shift the asymmetrical (AO) spurious modes away from the intended SO mode vibration. The AlN resonators with SiO2 addendums have been investigated theoretically with finite element analyses (FEAs) and validated experimentally. The measured response of the fabricated devices has shown successful mitigation of AO spurious mode without the compromise of electromechanical coupling, kt2, and quality factor Q.

Original languageEnglish (US)
Title of host publication2016 IEEE International Frequency Control Symposium, IFCS 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509020911
DOIs
StatePublished - Aug 16 2016
Event70th IEEE International Frequency Control Symposium, IFCS 2016 - New Orleans, United States
Duration: May 9 2016May 12 2016

Publication series

Name2016 IEEE International Frequency Control Symposium, IFCS 2016 - Proceedings

Other

Other70th IEEE International Frequency Control Symposium, IFCS 2016
Country/TerritoryUnited States
CityNew Orleans
Period5/9/165/12/16

Keywords

  • AlN
  • laterally vibrating resonators
  • mode shifting
  • spurious modes

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Instrumentation

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