Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array

Lingyu Kong, Yunshan Zhao, Binayak Dasgupta, Yi Ren, Kedar Hippalgaonkar, Xiuling Li, Wai Kin Chim, Sing Yang Chiam

Research output: Contribution to journalArticle

Abstract

The instability of isolate catalysts during metal-assisted chemical etching is a major hindrance to achieve high aspect ratio structures in the vertical and directional etching of silicon (Si). In this work, we discussed and showed how isolate catalyst motion can be influenced and controlled by the semiconductor doping type and the oxidant concentration ratio. We propose that the triggering event in deviating isolate catalyst motion is brought about by unequal etch rates across the isolate catalyst. This triggering event is indirectly affected by the oxidant concentration ratio through the etching rates. While the triggering events are stochastic, the doping concentration of silicon offers a good control in minimizing isolate catalyst motion. The doping concentration affects the porosity at the etching front, and this directly affects the van der Waals (vdWs) forces between the metal catalyst and Si during etching. A reduction in the vdWs forces resulted in a lower bending torque that can prevent the straying of the isolate catalyst from its directional etching, in the event of unequal etch rates. The key understandings in isolate catalyst motion derived from this work allowed us to demonstrate the fabrication of large area and uniformly ordered sub-500 nm nanoholes array with an unprecedented high aspect ratio of ∼12.

Original languageEnglish (US)
Pages (from-to)20981-20990
Number of pages10
JournalACS Applied Materials and Interfaces
Volume9
Issue number24
DOIs
StatePublished - Jun 21 2017

Fingerprint

Trenching
Silicon
Etching
Metals
Catalysts
Van der Waals forces
Oxidants
Aspect ratio
Semiconductor doping
Doping (additives)
Torque
Porosity
Fabrication

Keywords

  • Raman analysis
  • isolate catalyst
  • metal-assisted chemical etching
  • porous silicon
  • silicon
  • van der Waals force

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array. / Kong, Lingyu; Zhao, Yunshan; Dasgupta, Binayak; Ren, Yi; Hippalgaonkar, Kedar; Li, Xiuling; Chim, Wai Kin; Chiam, Sing Yang.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 24, 21.06.2017, p. 20981-20990.

Research output: Contribution to journalArticle

Kong, Lingyu ; Zhao, Yunshan ; Dasgupta, Binayak ; Ren, Yi ; Hippalgaonkar, Kedar ; Li, Xiuling ; Chim, Wai Kin ; Chiam, Sing Yang. / Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 24. pp. 20981-20990.
@article{09bf5c4a5279452cbac2d3ac9839933f,
title = "Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array",
abstract = "The instability of isolate catalysts during metal-assisted chemical etching is a major hindrance to achieve high aspect ratio structures in the vertical and directional etching of silicon (Si). In this work, we discussed and showed how isolate catalyst motion can be influenced and controlled by the semiconductor doping type and the oxidant concentration ratio. We propose that the triggering event in deviating isolate catalyst motion is brought about by unequal etch rates across the isolate catalyst. This triggering event is indirectly affected by the oxidant concentration ratio through the etching rates. While the triggering events are stochastic, the doping concentration of silicon offers a good control in minimizing isolate catalyst motion. The doping concentration affects the porosity at the etching front, and this directly affects the van der Waals (vdWs) forces between the metal catalyst and Si during etching. A reduction in the vdWs forces resulted in a lower bending torque that can prevent the straying of the isolate catalyst from its directional etching, in the event of unequal etch rates. The key understandings in isolate catalyst motion derived from this work allowed us to demonstrate the fabrication of large area and uniformly ordered sub-500 nm nanoholes array with an unprecedented high aspect ratio of ∼12.",
keywords = "Raman analysis, isolate catalyst, metal-assisted chemical etching, porous silicon, silicon, van der Waals force",
author = "Lingyu Kong and Yunshan Zhao and Binayak Dasgupta and Yi Ren and Kedar Hippalgaonkar and Xiuling Li and Chim, {Wai Kin} and Chiam, {Sing Yang}",
year = "2017",
month = "6",
day = "21",
doi = "10.1021/acsami.7b04565",
language = "English (US)",
volume = "9",
pages = "20981--20990",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "24",

}

TY - JOUR

T1 - Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array

AU - Kong, Lingyu

AU - Zhao, Yunshan

AU - Dasgupta, Binayak

AU - Ren, Yi

AU - Hippalgaonkar, Kedar

AU - Li, Xiuling

AU - Chim, Wai Kin

AU - Chiam, Sing Yang

PY - 2017/6/21

Y1 - 2017/6/21

N2 - The instability of isolate catalysts during metal-assisted chemical etching is a major hindrance to achieve high aspect ratio structures in the vertical and directional etching of silicon (Si). In this work, we discussed and showed how isolate catalyst motion can be influenced and controlled by the semiconductor doping type and the oxidant concentration ratio. We propose that the triggering event in deviating isolate catalyst motion is brought about by unequal etch rates across the isolate catalyst. This triggering event is indirectly affected by the oxidant concentration ratio through the etching rates. While the triggering events are stochastic, the doping concentration of silicon offers a good control in minimizing isolate catalyst motion. The doping concentration affects the porosity at the etching front, and this directly affects the van der Waals (vdWs) forces between the metal catalyst and Si during etching. A reduction in the vdWs forces resulted in a lower bending torque that can prevent the straying of the isolate catalyst from its directional etching, in the event of unequal etch rates. The key understandings in isolate catalyst motion derived from this work allowed us to demonstrate the fabrication of large area and uniformly ordered sub-500 nm nanoholes array with an unprecedented high aspect ratio of ∼12.

AB - The instability of isolate catalysts during metal-assisted chemical etching is a major hindrance to achieve high aspect ratio structures in the vertical and directional etching of silicon (Si). In this work, we discussed and showed how isolate catalyst motion can be influenced and controlled by the semiconductor doping type and the oxidant concentration ratio. We propose that the triggering event in deviating isolate catalyst motion is brought about by unequal etch rates across the isolate catalyst. This triggering event is indirectly affected by the oxidant concentration ratio through the etching rates. While the triggering events are stochastic, the doping concentration of silicon offers a good control in minimizing isolate catalyst motion. The doping concentration affects the porosity at the etching front, and this directly affects the van der Waals (vdWs) forces between the metal catalyst and Si during etching. A reduction in the vdWs forces resulted in a lower bending torque that can prevent the straying of the isolate catalyst from its directional etching, in the event of unequal etch rates. The key understandings in isolate catalyst motion derived from this work allowed us to demonstrate the fabrication of large area and uniformly ordered sub-500 nm nanoholes array with an unprecedented high aspect ratio of ∼12.

KW - Raman analysis

KW - isolate catalyst

KW - metal-assisted chemical etching

KW - porous silicon

KW - silicon

KW - van der Waals force

UR - http://www.scopus.com/inward/record.url?scp=85021169615&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021169615&partnerID=8YFLogxK

U2 - 10.1021/acsami.7b04565

DO - 10.1021/acsami.7b04565

M3 - Article

AN - SCOPUS:85021169615

VL - 9

SP - 20981

EP - 20990

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 24

ER -