Millimeter-wave power performance achieved by ion-implanted InGaAs-GaAs MESFET's with a gate length of 0.25 micron is described. When the device with a gate width of 150 micron was measured at 22 GHz, an output power of 95 mW, a power-added efficiency of 33%, and an associated gain of 7.3 dB were achieved. At an output power of 93 mW, a power-added efficiency of 25%, and an associated gain of 4 dB were obtained at 44 GHz. When the device with a gate width of 200 micron was measured at 60 GHz, an output power of 121 mW with 3 dB associated gain and 13% power-added efficiency were achieved.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Microwave and Guided Wave Letters|
|State||Published - Jun 1992|
ASJC Scopus subject areas
- Physics and Astronomy(all)