Millimeter wave monolithic IC's using direct ion implantation into GaAs LEC substrates

C. L. Lau, M. Feng, T. Hwang, T. Lepkowski, C. Ito, V. Dunn, N. Hodges

Research output: Contribution to conferencePaperpeer-review

Abstract

Millimeter-wave monolithic ICs consisting of two-stage driver amplifiers and 4-bit phase shifters were fabricated by direct ion implantation into 3-inch diameter GaAs LEC (liquid encapsulated Czochralski) substrates. The monolithic two-stage amplifiers with 0.3-micron gate length, ion-implanted GaAs MESFETs achieve a gain of 9.0 to 10.1 dB from 40 to 48 GHz with a gain of 9.5 dB at 44 GHz. In the same frequency range, the input return loss varies from 9.8 to 11.5 dB and output return loss from 6.6 to 9.0 dB. The 4-bit phase shifters exhibit very accurate phase shift within 3° for 0 to 247.5 states and 4-7° for 270 to 337.5 states at 44 GHz. The insertion loss is 9.4 to 11.1 dB for all 16 states. The authors concentrate on the results of monolithic driver amplifiers and digital phase shifters at Q-band frequencies.

Original languageEnglish (US)
Pages73-76
Number of pages4
StatePublished - Oct 1 1990
Externally publishedYes
Event12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC - New Orleans, LA, USA
Duration: Oct 7 1990Oct 10 1990

Other

Other12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC
CityNew Orleans, LA, USA
Period10/7/9010/10/90

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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