Abstract
Millimeter-wave monolithic ICs consisting of two-stage driver amplifiers and 4-bit phase shifters were fabricated by direct ion implantation into 3-inch diameter GaAs LEC (liquid encapsulated Czochralski) substrates. The monolithic two-stage amplifiers with 0.3-micron gate length, ion-implanted GaAs MESFETs achieve a gain of 9.0 to 10.1 dB from 40 to 48 GHz with a gain of 9.5 dB at 44 GHz. In the same frequency range, the input return loss varies from 9.8 to 11.5 dB and output return loss from 6.6 to 9.0 dB. The 4-bit phase shifters exhibit very accurate phase shift within 3° for 0 to 247.5 states and 4-7° for 270 to 337.5 states at 44 GHz. The insertion loss is 9.4 to 11.1 dB for all 16 states. The authors concentrate on the results of monolithic driver amplifiers and digital phase shifters at Q-band frequencies.
Original language | English (US) |
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Pages | 73-76 |
Number of pages | 4 |
State | Published - Oct 1990 |
Externally published | Yes |
Event | 12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC - New Orleans, LA, USA Duration: Oct 7 1990 → Oct 10 1990 |
Other
Other | 12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC |
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City | New Orleans, LA, USA |
Period | 10/7/90 → 10/10/90 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering