Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates

Randal S. Schwindt, Vipan Kumar, Almaz Kuliev, G. Simin, J. W. Yang, M. Asif Khan, Margaret E. Muir, Ilesanmi Adesida

Research output: Contribution to journalLetterpeer-review


We report on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (fT) of 65 GHz, and maximum frequency of oscillation (fmax) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.

Original languageEnglish (US)
Pages (from-to)93-95
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number3
StatePublished - Mar 2003
Externally publishedYes


  • GaN
  • High electron mobility transistors (HEMTs)
  • Microwave power
  • SiC

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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