Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates

Randal S. Schwindt; Vipan Kumar; Almaz Kuliev; G. Simin; J. W. Yang; M. Asif Khan; Margaret E. Muir; Ilesanmi Adesida

doi:10.1109/LMWC.2003.810115

Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates

Randal S. Schwindt, Vipan Kumar, Almaz Kuliev, G. Simin, J. W. Yang, M. Asif Khan, Margaret E. Muir, Ilesanmi Adesida

Research output: Contribution to journal › Letter › peer-review

Abstract

We report on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (f_T) of 65 GHz, and maximum frequency of oscillation (f_max) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.

Original language	English (US)
Pages (from-to)	93-95
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	13
Issue number	3
DOIs	https://doi.org/10.1109/LMWC.2003.810115
State	Published - Mar 2003
Externally published	Yes

Keywords

GaN
High electron mobility transistors (HEMTs)
Microwave power
SiC

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1109/LMWC.2003.810115

Library availability

Discover UIUC Full Text

Cite this

@article{eac3acf463ad4ca2a8ec5bf25cb99802,

title = "Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates",

abstract = "We report on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (fT) of 65 GHz, and maximum frequency of oscillation (fmax) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.",

keywords = "GaN, High electron mobility transistors (HEMTs), Microwave power, SiC",

author = "Schwindt, {Randal S.} and Vipan Kumar and Almaz Kuliev and G. Simin and Yang, {J. W.} and Khan, {M. Asif} and Muir, {Margaret E.} and Ilesanmi Adesida",

note = "Funding Information: Manuscript received July 22, 2002; revised September 23, 2002. This work was supported in part by ONR under Contract N00014-01-1-1000 (monitor: Dr. J. Zolper) and Contract N0014-1-1072 (monitor: Dr. J. Zolper) and by TriQuint Semiconductor, Inc., and by the Ballistic Missile Defense Organization (BMDO) under Army SMDC contract DASG60-98-1-0004, monitored by Tarry Bauer, Dr. Brian Strickland, and Dr. Kepi Wu. The review of this letter was arranged by Associate Editor Dr. R{\"u}diger Vahldieck.",

year = "2003",

month = mar,

doi = "10.1109/LMWC.2003.810115",

language = "English (US)",

volume = "13",

pages = "93--95",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates

AU - Schwindt, Randal S.

AU - Kumar, Vipan

AU - Kuliev, Almaz

AU - Simin, G.

AU - Yang, J. W.

AU - Khan, M. Asif

AU - Muir, Margaret E.

AU - Adesida, Ilesanmi

N1 - Funding Information: Manuscript received July 22, 2002; revised September 23, 2002. This work was supported in part by ONR under Contract N00014-01-1-1000 (monitor: Dr. J. Zolper) and Contract N0014-1-1072 (monitor: Dr. J. Zolper) and by TriQuint Semiconductor, Inc., and by the Ballistic Missile Defense Organization (BMDO) under Army SMDC contract DASG60-98-1-0004, monitored by Tarry Bauer, Dr. Brian Strickland, and Dr. Kepi Wu. The review of this letter was arranged by Associate Editor Dr. Rüdiger Vahldieck.

PY - 2003/3

Y1 - 2003/3

N2 - We report on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (fT) of 65 GHz, and maximum frequency of oscillation (fmax) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.

AB - We report on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (fT) of 65 GHz, and maximum frequency of oscillation (fmax) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.

KW - GaN

KW - High electron mobility transistors (HEMTs)

KW - Microwave power

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=0038577082&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038577082&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2003.810115

DO - 10.1109/LMWC.2003.810115

M3 - Letter

AN - SCOPUS:0038577082

SN - 1531-1309

VL - 13

SP - 93

EP - 95

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 3

ER -

Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this