Mid-infrared doping tunable transmission through subwavelength metal hole arrays on InSb

B. S. Passmore; D. G. Allen; S. R. Vangala; W. D. Goodhue; D. Wasserman; E. A. Shaner

doi:10.1364/OE.17.010223

Mid-infrared doping tunable transmission through subwavelength metal hole arrays on InSb

B. S. Passmore, D. G. Allen, S. R. Vangala, W. D. Goodhue, D. Wasserman, E. A. Shaner

Research output: Contribution to journal › Article › peer-review

Abstract

Doping-tunable mid-infrared extraordinary transmission is demonstrated from a periodic metal hole array patterned on n-InSb. The polarization-dependent transmission was measured at room temperature and 77 K. In addition, the extraordinary transmission was measured for incident angles from 0° to 35° in 5° steps, A fundamental resonance shift of ∼123 cm ^-1 (1.4 u.m) is observed by varying the doping from 1 × 10 ¹⁶ to 2 × 10¹⁸ cm^-3. The calculated transmission resonances were in good agreement with the experimental results. This suggests that InSb semiconductor-based plasmonic structures may be suitable for a variety of tunable mid-infrared device applications.

Original language	English (US)
Pages (from-to)	10223-10230
Number of pages	8
Journal	Optics Express
Volume	17
Issue number	12
DOIs	https://doi.org/10.1364/OE.17.010223
State	Published - Jun 8 2009
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.17.010223

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abstract = "Doping-tunable mid-infrared extraordinary transmission is demonstrated from a periodic metal hole array patterned on n-InSb. The polarization-dependent transmission was measured at room temperature and 77 K. In addition, the extraordinary transmission was measured for incident angles from 0° to 35° in 5° steps, A fundamental resonance shift of ∼123 cm -1 (1.4 u.m) is observed by varying the doping from 1 × 10 16 to 2 × 1018 cm-3. The calculated transmission resonances were in good agreement with the experimental results. This suggests that InSb semiconductor-based plasmonic structures may be suitable for a variety of tunable mid-infrared device applications.",

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AU - Passmore, B. S.

AU - Allen, D. G.

AU - Vangala, S. R.

AU - Goodhue, W. D.

AU - Wasserman, D.

AU - Shaner, E. A.

PY - 2009/6/8

Y1 - 2009/6/8

N2 - Doping-tunable mid-infrared extraordinary transmission is demonstrated from a periodic metal hole array patterned on n-InSb. The polarization-dependent transmission was measured at room temperature and 77 K. In addition, the extraordinary transmission was measured for incident angles from 0° to 35° in 5° steps, A fundamental resonance shift of ∼123 cm -1 (1.4 u.m) is observed by varying the doping from 1 × 10 16 to 2 × 1018 cm-3. The calculated transmission resonances were in good agreement with the experimental results. This suggests that InSb semiconductor-based plasmonic structures may be suitable for a variety of tunable mid-infrared device applications.

AB - Doping-tunable mid-infrared extraordinary transmission is demonstrated from a periodic metal hole array patterned on n-InSb. The polarization-dependent transmission was measured at room temperature and 77 K. In addition, the extraordinary transmission was measured for incident angles from 0° to 35° in 5° steps, A fundamental resonance shift of ∼123 cm -1 (1.4 u.m) is observed by varying the doping from 1 × 10 16 to 2 × 1018 cm-3. The calculated transmission resonances were in good agreement with the experimental results. This suggests that InSb semiconductor-based plasmonic structures may be suitable for a variety of tunable mid-infrared device applications.

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Mid-infrared doping tunable transmission through subwavelength metal hole arrays on InSb

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