Mid-infrared broadband modulation instability and 50 dB Raman assisted parametric gain in silicon photonic wires

Xiaoping Liu, Bart Kuyken, Gunther Roelkens, Roel Baets, Yurii A. Vlasov, Richard M. Osgood, William M.J. Green

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate broadband modulation instability, > 40 dB parametric amplification with on-chip gain bandwidth > 580 nm, and narrowband Raman-assisted peak on-chip gain exceeding 50 dB, using mid-infrared dispersion-engineered silicon nanophotonic wires.

Original languageEnglish (US)
Title of host publication2011 Conference on Lasers and Electro-Optics
Subtitle of host publicationLaser Science to Photonic Applications, CLEO 2011
StatePublished - Sep 1 2011
Externally publishedYes
Event2011 Conference on Lasers and Electro-Optics, CLEO 2011 - Baltimore, MD, United States
Duration: May 1 2011May 6 2011

Publication series

Name2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

Other

Other2011 Conference on Lasers and Electro-Optics, CLEO 2011
CountryUnited States
CityBaltimore, MD
Period5/1/115/6/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Liu, X., Kuyken, B., Roelkens, G., Baets, R., Vlasov, Y. A., Osgood, R. M., & Green, W. M. J. (2011). Mid-infrared broadband modulation instability and 50 dB Raman assisted parametric gain in silicon photonic wires. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 [5950677] (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).