TY - JOUR
T1 - Microwave Spin Control of a Tin-Vacancy Qubit in Diamond
AU - Rosenthal, Eric I.
AU - Anderson, Christopher P.
AU - Kleidermacher, Hannah C.
AU - Stein, Abigail J.
AU - Lee, Hope
AU - Grzesik, Jakob
AU - Scuri, Giovanni
AU - Rugar, Alison E.
AU - Riedel, Daniel
AU - Aghaeimeibodi, Shahriar
AU - Ahn, Geun Ho
AU - Van Gasse, Kasper
AU - Vučković, Jelena
N1 - This work has been supported by the Department of Energy under the Q-NEXT program, and Grants No. DE-SC0020115 and No. DE-AC02-76SF00515. E. I. R. and C. P. A. acknowledge support by an appointment to the Intelligence Community Postdoctoral Research Fellowship Program at Stanford University administered by Oak Ridge Institute for Science and Education (ORISE) through an interagency agreement between the U.S. Department of Energy and the Office of the Director of National Intelligence (ODNI). H. L. and H. C. K. acknowledge support by the Burt and Deedee McMurtry Stanford Graduate Fellowship (SGF). J. G. acknowledges support from the Hertz Fellowship. G. S. and S. A. acknowledge support from the Stanford Bloch Postdoctoral Fellowship. D. R. acknowledges support from the Swiss National Science Foundation (Project No. P400P2_194424). K. V. G. is supported by the BAEF and the FWO (12ZB520N). D. R. and S. A. contributed to this work prior to joining AWS. We thank Jesús Arjona Martínez, Cathryn Michaels, Ryan Parker, Mykyta Onizhuk, Souvik Biswas, Laura Orphal-Kobin, Tim Schröder, Gergő Thiering, Péter Udvarhelyi, Ádám Gali, and Joonhee Choi for helpful discussions. We thank Tom Lee for lending a microwave power meter. We thank Daniil Lukin and Alex White for help with printed circuit board preparation. We thank Jacob Feder, Jonathan Marcks, and Mia Froehling Gallier for help with instrument control code, based on the “nspyre” framework . We thank Haiyu Lu, Shuo Li, Patrick McQuade, Zhi-Xun Shen, and Nicholas Melosh for assistance with diamond sample preparation. We thank Nazar Delgan, F. Joseph Heremans, Michael Titze, and Edward Bielejec for collaboration on the preparation of related devices.
PY - 2023/7
Y1 - 2023/7
N2 - The negatively charged tin-vacancy (SnV-) center in diamond is a promising solid-state qubit for applications in quantum networking due to its high quantum efficiency, strong zero phonon emission, and reduced sensitivity to electrical noise. The SnV- has a large spin-orbit coupling, which allows for long spin lifetimes at elevated temperatures, but unfortunately suppresses the magnetic dipole transitions desired for quantum control. Here, by use of a naturally strained center, we overcome this limitation and achieve high-fidelity microwave spin control. We demonstrate a π-pulse fidelity of up to 99.51±0.03% and a Hahn-echo coherence time of T2echo=170.0±2.8 μs, both the highest yet reported for SnV- platform. This performance comes without compromise to optical stability, and is demonstrated at 1.7 K where ample cooling power is available to mitigate drive-induced heating. These results pave the way for SnV- spins to be used as a building block for future quantum technologies.
AB - The negatively charged tin-vacancy (SnV-) center in diamond is a promising solid-state qubit for applications in quantum networking due to its high quantum efficiency, strong zero phonon emission, and reduced sensitivity to electrical noise. The SnV- has a large spin-orbit coupling, which allows for long spin lifetimes at elevated temperatures, but unfortunately suppresses the magnetic dipole transitions desired for quantum control. Here, by use of a naturally strained center, we overcome this limitation and achieve high-fidelity microwave spin control. We demonstrate a π-pulse fidelity of up to 99.51±0.03% and a Hahn-echo coherence time of T2echo=170.0±2.8 μs, both the highest yet reported for SnV- platform. This performance comes without compromise to optical stability, and is demonstrated at 1.7 K where ample cooling power is available to mitigate drive-induced heating. These results pave the way for SnV- spins to be used as a building block for future quantum technologies.
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U2 - 10.1103/PhysRevX.13.031022
DO - 10.1103/PhysRevX.13.031022
M3 - Article
AN - SCOPUS:85172869361
SN - 2160-3308
VL - 13
JO - Physical Review X
JF - Physical Review X
IS - 3
M1 - 031022
ER -