Microwave Performance of Low-Power Ion-Implanted 0.25-Micron Gate GaAs MESFET for Low-Cost MMIC’s Applications

P. J. Apostolakis, J. Middleton, J. Kruse, D. Scherrer, D. Barlage, M. Feng, A. N. Lepore

Research output: Contribution to journalArticlepeer-review

Abstract

Low-power microwave performance of an enhancement mode (E-mode) ion implanted GaAs MESFET is reported. The 0.25-μm x 100-μm E-MESFET has a threshold voltage of Vth = 0.0 V. At 1.0 mW operation of power with a bias condition of Vds= 0.5 V and Ids = 2 mA, a noise figure of 0.85 dB with an associated gain of 15 dB was measured at 4 GHz. These results demonstrate the GaAs E-MESFET is an excellent choice for low power personal communication applications.

Original languageEnglish (US)
Pages (from-to)278-280
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume3
Issue number8
DOIs
StatePublished - Aug 1993

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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