Low-power microwave performance of an enhancement mode (E-mode) ion implanted GaAs MESFET is reported. The 0.25-μm x 100-μm E-MESFET has a threshold voltage of Vth = 0.0 V. At 1.0 mW operation of power with a bias condition of Vds= 0.5 V and Ids = 2 mA, a noise figure of 0.85 dB with an associated gain of 15 dB was measured at 4 GHz. These results demonstrate the GaAs E-MESFET is an excellent choice for low power personal communication applications.
ASJC Scopus subject areas
- Physics and Astronomy(all)