Microwave operation and modulation of a transistor laser

R. Chan, M. Feng, N. Holonyak, G. Walter

Research output: Contribution to journalArticlepeer-review

Abstract

The microwave operation and modulation (3 GHz) of an InGaPGaAs heterojunction bipolar transistor (HBT) laser is reported. The HBT layer structure is in the form of an optical waveguide (with cleaved ends) that also includes an InGaAs recombination quantum well in the p -type base region to improve the recombination radiation properties. The shift in HBT laser operation from spontaneous to stimulated emission is manifest as a distinct change in the HBT current-voltage characteristics, specifically a decrease in the common-emitter current gain (Βdc = IC IB) and the occurrence of even a more striking peak in the small signal (ac) gain Βac =Δ IC Δ IB.

Original languageEnglish (US)
Article number131114
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number13
DOIs
StatePublished - Mar 28 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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