Microwave noise characteristics of AlGaN/GaN HEMTs on, SiC substrates for broad-band low-noise amplifiers

J. W. Lee; A. Kuliev; V. Kumar; R. Schwindt; I. Adesida

doi:10.1109/LMWC.2004.828026

Microwave noise characteristics of AlGaN/GaN HEMTs on, SiC substrates for broad-band low-noise amplifiers

J. W. Lee, A. Kuliev, V. Kumar, R. Schwindt, I. Adesida

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Abstract

This letter reports high-performance passivated AlGaN/GaN high electron-mobility transistors (HEMTs) with 0.25-μm gate-length for low noise applications. The devices exhibited a minimum noise figure (NF_mim) of 0.98 dB and an associated gain (G_a) of 8.97 dB at 18 GHz. The noise resistance (R_n), the measure of noise sensitivity to source mismatch, is 31 Ω at 18 GHz, which is relatively low and suitable for broad-band low noise amplifiers. The noise modeling analysis shows that the minimum noise figure of the GaN HEMT can be reduced further by reducing noise contributions from parasitics. These results demonstrate the viability of AlGaN/GaN HEMTs for low-noise as well as high power amplifiers.

Original language	English (US)
Pages (from-to)	259-261
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1109/LMWC.2004.828026
State	Published - Jun 2004

Keywords

AlGaN
GaN
HEMTs
Microwave noise
Minimum noise figure

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1109/LMWC.2004.828026

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title = "Microwave noise characteristics of AlGaN/GaN HEMTs on, SiC substrates for broad-band low-noise amplifiers",

abstract = "This letter reports high-performance passivated AlGaN/GaN high electron-mobility transistors (HEMTs) with 0.25-μm gate-length for low noise applications. The devices exhibited a minimum noise figure (NFmim) of 0.98 dB and an associated gain (Ga) of 8.97 dB at 18 GHz. The noise resistance (Rn), the measure of noise sensitivity to source mismatch, is 31 Ω at 18 GHz, which is relatively low and suitable for broad-band low noise amplifiers. The noise modeling analysis shows that the minimum noise figure of the GaN HEMT can be reduced further by reducing noise contributions from parasitics. These results demonstrate the viability of AlGaN/GaN HEMTs for low-noise as well as high power amplifiers.",

keywords = "AlGaN, GaN, HEMTs, Microwave noise, Minimum noise figure",

author = "Lee, {J. W.} and A. Kuliev and V. Kumar and R. Schwindt and I. Adesida",

note = "Funding Information: Manuscript received September 24, 2003; revised December 16, 2003. This work was supported by ONR under Contracts N00014-01-1-1000 and N00014-1-1072. The review of this letter was arranged by Associate Editor A. Stelzer.",

year = "2004",

month = jun,

doi = "10.1109/LMWC.2004.828026",

language = "English (US)",

volume = "14",

pages = "259--261",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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TY - JOUR

T1 - Microwave noise characteristics of AlGaN/GaN HEMTs on, SiC substrates for broad-band low-noise amplifiers

AU - Lee, J. W.

AU - Kuliev, A.

AU - Kumar, V.

AU - Schwindt, R.

AU - Adesida, I.

N1 - Funding Information: Manuscript received September 24, 2003; revised December 16, 2003. This work was supported by ONR under Contracts N00014-01-1-1000 and N00014-1-1072. The review of this letter was arranged by Associate Editor A. Stelzer.

PY - 2004/6

Y1 - 2004/6

N2 - This letter reports high-performance passivated AlGaN/GaN high electron-mobility transistors (HEMTs) with 0.25-μm gate-length for low noise applications. The devices exhibited a minimum noise figure (NFmim) of 0.98 dB and an associated gain (Ga) of 8.97 dB at 18 GHz. The noise resistance (Rn), the measure of noise sensitivity to source mismatch, is 31 Ω at 18 GHz, which is relatively low and suitable for broad-band low noise amplifiers. The noise modeling analysis shows that the minimum noise figure of the GaN HEMT can be reduced further by reducing noise contributions from parasitics. These results demonstrate the viability of AlGaN/GaN HEMTs for low-noise as well as high power amplifiers.

AB - This letter reports high-performance passivated AlGaN/GaN high electron-mobility transistors (HEMTs) with 0.25-μm gate-length for low noise applications. The devices exhibited a minimum noise figure (NFmim) of 0.98 dB and an associated gain (Ga) of 8.97 dB at 18 GHz. The noise resistance (Rn), the measure of noise sensitivity to source mismatch, is 31 Ω at 18 GHz, which is relatively low and suitable for broad-band low noise amplifiers. The noise modeling analysis shows that the minimum noise figure of the GaN HEMT can be reduced further by reducing noise contributions from parasitics. These results demonstrate the viability of AlGaN/GaN HEMTs for low-noise as well as high power amplifiers.

KW - AlGaN

KW - GaN

KW - HEMTs

KW - Microwave noise

KW - Minimum noise figure

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U2 - 10.1109/LMWC.2004.828026

DO - 10.1109/LMWC.2004.828026

M3 - Article

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SN - 1531-1309

VL - 14

SP - 259

EP - 261

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 6

ER -

Microwave noise characteristics of AlGaN/GaN HEMTs on, SiC substrates for broad-band low-noise amplifiers

Abstract

Keywords

ASJC Scopus subject areas

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