Samples of rice husks were transformed to β (3C)-SiC by microwave processing in controlled conditions of temperature and vacuum. This simple and fast way of producing powdered samples of silicon carbide is technologically important if this material is to be used for electronics, sensors, biotechnology, and other applications. Using x-ray diffraction it was found that the microwave processed sample at 1900°C consists of β (3C)-SiC phase. Raman scattering measurements confirmed the formation of β (3C)-SiC phase. Transmission electron microscopy revealed the presence of stacking faults along the  direction. The presence of 6H/4H stacking faults in 3C phase is explained in terms of their total energies. The presence of these stacking faults with a ∼1 eV band offset between the host 3C and hexagonal stacking faults implies that these stacking faults provide a conduction barrier, and the interfaces between the stacking faults and host lattice act as a heterojunction that may provide potential utility for various optoelectronic applications.
ASJC Scopus subject areas
- Physics and Astronomy(all)