Microwave equivalent circuit modeling of 29 GHz modulated 850 nm oxide-confined VCSELs

Curtis Y. Wang, Michael Liu, Fei Tan, Milton Feng

Research output: Contribution to conferencePaper

Abstract

We have demonstrated a Vertical Cavity Surface Emitting Laser with modulation bandwidth, f-3dB, of 29 GHz and achieved 57 Gb/s error-free (BER ≤ 10-12) data transmission at 25°C. In this work, we have established the microwave equivalent circuit model and the data fitting technique to extract electrical parasitic parameters of the VCSEL. Ultimately we are able to extract two important parameters, namely the recombination lifetime and the photon lifetime from the measured results. We also show comparison between the overall and intrinsic optical modulation bandwidth.

Original languageEnglish (US)
Pages337-340
Number of pages4
StatePublished - Jan 1 2016
Event31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States
Duration: May 16 2016May 19 2016

Other

Other31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016
CountryUnited States
CityMiami
Period5/16/165/19/16

Keywords

  • Microwave Equivalent Circuit Modeling
  • Vertical Cavity Surface-Emitting Laser (VCSEL)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Wang, C. Y., Liu, M., Tan, F., & Feng, M. (2016). Microwave equivalent circuit modeling of 29 GHz modulated 850 nm oxide-confined VCSELs. 337-340. Paper presented at 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016, Miami, United States.