Microwave electronics device applications of AlGaN/GaN heterostructures

Q. Chen, J. W. Yang, M. Blasingame, C. Faber, A. T. Ping, I. Adesida

Research output: Contribution to journalConference articlepeer-review


One thrust in the recent AlGaN/GaN based HFET development hinges on the use of SiC substrates for the growth of the AlGaN/GaN heterostructures. We have achieved Gm and maximum drain current (Imax) as high as 222 mS mm-1 and 1.71 A mm-1 for HFETs grown on n-SiC. The HFETs on p-SiC have also shown Gm and Imax of 230 mS mm-1 and 1.43 A mm-1. These devices exhibited cut-off frequency (f1) and frequency of oscillation (fmax) of 55 and 56 GHz for HFETs on p-SiC, further demonstrating the applicability of AlGaN/GaN-based HFETs in high power microwave frequency range. The availability of high quality AlGaN/GaN heterostructure has also permitted the implementation of such new device concept as metal-insulator-semiconductor FETs (MISFETs). Our MISFETs have shown low gate leakage in ± 6 V gate bias range with Gm as high as 86 mS mm-1.

Original languageEnglish (US)
Pages (from-to)395-400
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
StatePublished - May 6 1999
EventProceedings of the 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting) - Strasbourg
Duration: Jun 16 1998Jun 19 1998

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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