Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser

C. H. Wu; H. W. Then; M. Feng; N. Holonyak

doi:10.1063/1.3377918

Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser

C. H. Wu, H. W. Then, M. Feng, N. Holonyak

Electrical and Computer Engineering

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Abstract

By studying the optical microwave frequency response of a microcavity quantum-well vertical cavity surface-emitting laser (VCSEL) in the transition, over a low (a spread-out) mode density, from spontaneous to coherent operation, we resolve the dynamics (spontaneous to stimulated) of electron-hole recombination and reveal the existence of "fast" spontaneous recombination (τBspon <159 ps) in a carrier population generally characterized by a large average lifetime of ∼1 ns (Δn/ τ_av =Δ n¹ / τ_fast + (Δn-Δ n₁) / τ_slow, τ_fast < τ_slow). The measured average spontaneous lifetime is not a constant but is altered by the device size, geometry, and boundary conditions (e. g., cavity and current input-output boundary conditions).

Original language	English (US)
Article number	131108
Journal	Applied Physics Letters
Volume	96
Issue number	13
DOIs	https://doi.org/10.1063/1.3377918
State	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3377918

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title = "Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser",

abstract = "By studying the optical microwave frequency response of a microcavity quantum-well vertical cavity surface-emitting laser (VCSEL) in the transition, over a low (a spread-out) mode density, from spontaneous to coherent operation, we resolve the dynamics (spontaneous to stimulated) of electron-hole recombination and reveal the existence of {"}fast{"} spontaneous recombination (τBspon <159 ps) in a carrier population generally characterized by a large average lifetime of ∼1 ns (Δn/ τav =Δ n1 / τfast + (Δn-Δ n1) / τslow, τfast < τslow). The measured average spontaneous lifetime is not a constant but is altered by the device size, geometry, and boundary conditions (e. g., cavity and current input-output boundary conditions).",

author = "Wu, {C. H.} and Then, {H. W.} and M. Feng and N. Holonyak",

note = "Funding Information: N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak., Jr. Chair of Electrical and Computer Engineering. The authors would like to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support by Army Research Office under Grant No. W911NF-08-1-0469.",

year = "2010",

doi = "10.1063/1.3377918",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

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T1 - Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser

AU - Wu, C. H.

AU - Then, H. W.

AU - Feng, M.

AU - Holonyak, N.

N1 - Funding Information: N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak., Jr. Chair of Electrical and Computer Engineering. The authors would like to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support by Army Research Office under Grant No. W911NF-08-1-0469.

PY - 2010

Y1 - 2010

N2 - By studying the optical microwave frequency response of a microcavity quantum-well vertical cavity surface-emitting laser (VCSEL) in the transition, over a low (a spread-out) mode density, from spontaneous to coherent operation, we resolve the dynamics (spontaneous to stimulated) of electron-hole recombination and reveal the existence of "fast" spontaneous recombination (τBspon <159 ps) in a carrier population generally characterized by a large average lifetime of ∼1 ns (Δn/ τav =Δ n1 / τfast + (Δn-Δ n1) / τslow, τfast < τslow). The measured average spontaneous lifetime is not a constant but is altered by the device size, geometry, and boundary conditions (e. g., cavity and current input-output boundary conditions).

AB - By studying the optical microwave frequency response of a microcavity quantum-well vertical cavity surface-emitting laser (VCSEL) in the transition, over a low (a spread-out) mode density, from spontaneous to coherent operation, we resolve the dynamics (spontaneous to stimulated) of electron-hole recombination and reveal the existence of "fast" spontaneous recombination (τBspon <159 ps) in a carrier population generally characterized by a large average lifetime of ∼1 ns (Δn/ τav =Δ n1 / τfast + (Δn-Δ n1) / τslow, τfast < τslow). The measured average spontaneous lifetime is not a constant but is altered by the device size, geometry, and boundary conditions (e. g., cavity and current input-output boundary conditions).

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DO - 10.1063/1.3377918

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SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131108

ER -

Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser

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