Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers

Christine Caragianis-Broadbridge; Jin Ping Han; T. P. Ma; Ann Hein Lehman; Wenjuan Zhu; Zhijiong Luo; Daniel L. Pechkis; Bruce L. Laube

Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers

Christine Caragianis-Broadbridge, Jin Ping Han, T. P. Ma, Ann Hein Lehman, Wenjuan Zhu, Zhijiong Luo, Daniel L. Pechkis, Bruce L. Laube

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi ₂ Ta ₂ O ₉ (SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current-voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed.

Original language	English (US)
Pages (from-to)	F851-F856
Journal	Materials Research Society Symposium - Proceedings
Volume	666
State	Published - 2001
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Library availability

Discover UIUC Full Text

Cite this

@article{b31504711c7141ee9e499cca4ff35f62,

title = "Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers",

abstract = " This paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi 2 Ta 2 O 9 (SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current-voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed. ",

author = "Christine Caragianis-Broadbridge and Han, {Jin Ping} and Ma, {T. P.} and Lehman, {Ann Hein} and Wenjuan Zhu and Zhijiong Luo and Pechkis, {Daniel L.} and Laube, {Bruce L.}",

year = "2001",

language = "English (US)",

volume = "666",

pages = "F851--F856",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers

AU - Caragianis-Broadbridge, Christine

AU - Han, Jin Ping

AU - Ma, T. P.

AU - Lehman, Ann Hein

AU - Zhu, Wenjuan

AU - Luo, Zhijiong

AU - Pechkis, Daniel L.

AU - Laube, Bruce L.

PY - 2001

Y1 - 2001

N2 - This paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi 2 Ta 2 O 9 (SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current-voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed.

AB - This paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi 2 Ta 2 O 9 (SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current-voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed.

UR - http://www.scopus.com/inward/record.url?scp=0035558249&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035558249&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035558249

SN - 0272-9172

VL - 666

SP - F851-F856

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

ER -

Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers

Abstract

ASJC Scopus subject areas

Library availability

Related links

Fingerprint

Cite this