Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers

Christine Caragianis-Broadbridge, Jin Ping Han, T. P. Ma, Ann Hein Lehman, Wenjuan Zhu, Zhijiong Luo, Daniel L. Pechkis, Bruce L. Laube

Research output: Contribution to journalArticle

Abstract

This paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi2Ta2O9 (SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current-voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed.

LanguageEnglish (US)
PagesF851-F856
JournalMaterials Research Society Symposium - Proceedings
Volume666
StatePublished - Jan 1 2001
Externally publishedYes

Fingerprint

Buffer layers
Ferroelectric materials
capacitors
Capacitors
Physical properties
buffers
physical properties
Hafnium oxides
Transmission electron microscopy
Data storage equipment
microstructure
Microstructure
Silicon oxides
Electric potential
Silicon
vapor jets
Silicon nitride
Zirconia
hafnium oxides
Energy dispersive spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Caragianis-Broadbridge, C., Han, J. P., Ma, T. P., Lehman, A. H., Zhu, W., Luo, Z., ... Laube, B. L. (2001). Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers. Materials Research Society Symposium - Proceedings, 666, F851-F856.

Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers. / Caragianis-Broadbridge, Christine; Han, Jin Ping; Ma, T. P.; Lehman, Ann Hein; Zhu, Wenjuan; Luo, Zhijiong; Pechkis, Daniel L.; Laube, Bruce L.

In: Materials Research Society Symposium - Proceedings, Vol. 666, 01.01.2001, p. F851-F856.

Research output: Contribution to journalArticle

Caragianis-Broadbridge, C, Han, JP, Ma, TP, Lehman, AH, Zhu, W, Luo, Z, Pechkis, DL & Laube, BL 2001, 'Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers', Materials Research Society Symposium - Proceedings, vol. 666, pp. F851-F856.
Caragianis-Broadbridge, Christine ; Han, Jin Ping ; Ma, T. P. ; Lehman, Ann Hein ; Zhu, Wenjuan ; Luo, Zhijiong ; Pechkis, Daniel L. ; Laube, Bruce L. / Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers. In: Materials Research Society Symposium - Proceedings. 2001 ; Vol. 666. pp. F851-F856.
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