Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers

Christine Caragianis-Broadbridge, Jin Ping Han, T. P. Ma, Ann Hein Lehman, Wenjuan Zhu, Zhijiong Luo, Daniel L. Pechkis, Bruce L. Laube

Research output: Contribution to journalArticle

Abstract

This paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi 2 Ta 2 O 9 (SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current-voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed.

Original languageEnglish (US)
Pages (from-to)F851-F856
JournalMaterials Research Society Symposium - Proceedings
Volume666
StatePublished - Jan 1 2001
Externally publishedYes

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Caragianis-Broadbridge, C., Han, J. P., Ma, T. P., Lehman, A. H., Zhu, W., Luo, Z., Pechkis, D. L., & Laube, B. L. (2001). Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers. Materials Research Society Symposium - Proceedings, 666, F851-F856.