@inproceedings{5e1a53fc88c1494ca96f463bc668a97e,
title = "Microstructure and interface properties of laterally oxidized AlxGal-xAs",
abstract = "The microstructure and interface properties of AlxGa1- xAs materials that have been laterally oxidized in wet N 2 for several compositions (x equals 0.80, 0.82 . . . 1.00) and temperatures (360 degrees Celsius to 450 degrees Celsius) have been studied. The micro-structure is found to be relatively insensitive to composition and oxidation temperature. The oxidation forms an amorphous solid solution (AlxGa1-x)2O3 that transforms to polycrystalline, γ-(AlxGa1-x)2O3 under electron beam exposure in the electron microscope. Evidence suggests a small fraction of crystalline (AlxGa1- x)2O3 is formed via post oxidation annealing of the oxide. The level of hydrogen present in the oxidized layers is 1.1 multiplied by 1021 cm-3, which is too low for the amorphous phase observed to be a hydroxide rather than an oxide. The amount of As in the layer is reduced to less than 2 atm%, and no As precipitates are observed. The (AlxGa1-x)2O3/GaAs interface is abrupt, but prolonged oxidation will cause the GaAs to oxidize at the internal interfaces. The reaction front between the oxidized and the unoxidized AlxGa1-xAs has a 10 to 20 nm-wide amorphous zone that shows a different contrast than the remainder of the amorphous oxide and is stable under electron irradiation.",
author = "Twesten, {Ray D.} and Follstaedt, {David M.} and Choquette, {Kent D.}",
year = "1997",
language = "English (US)",
isbn = "0819424145",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",
pages = "56--62",
editor = "Choquette, {Kent D.} and Deppe, {Dennis G.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Vertical-Cavity Surface-Emitting Lasers ; Conference date: 13-02-1997 Through 14-02-1997",
}