Microstructural examination of extended crystal defects in silicon selective epitaxial growth (SEG)

Keyphrases

• Oxides 100%
• Crystal Defects 100%
• Selective Epitaxial Growth 100%
• Defects in Silicon 100%
• Microstructural Examination 100%
• Transmission Electron Microscopy 50%
• Electronic Behavior 50%
• Extended Defects 50%
• Interfacial Region 50%
• Device Performance 50%
• Diode 50%
• Si Substrate 50%
• Thermal Expansion Mismatch 50%
• Process Modification 50%
• Isolated Device 50%
• Defect Reduction 50%

Material Science

• Silicon 100%
• Oxide Compound 100%
• Epitaxy 100%
• Crystal Defect 100%
• Density 50%
• Transmission Electron Microscopy 50%
• Thermal Expansion 50%